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Title: Two dimensional electron transport in modulation-doped In{sub 0.53}Ga{sub 0.47}As/AlAs{sub 0.56}Sb{sub 0.44} ultrathin quantum wells

Abstract

We have investigated the growth and electron transport in In{sub 0.53}Ga{sub 0.47}As/AlAs{sub 0.56}Sb{sub 0.44} two dimensional electron gases (2DEG) and compared their properties with In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As 2DEGs. For 10 nm thick InGaAs wells, the electron mobility of InGaAs/AlAsSb 2DEGs is comparable to that of InGaAs/InAlAs 2DEGs. Upon thinning the wells to 3 nm, the 2DEG mobility is degraded quickly and stronger interface roughness scattering is observed for InGaAs/AlAsSb heterointerfaces than for InGaAs/InAlAs heterointerfaces. Changing the group-V exposure between As and Sb during growth interruptions at the InGaAs/AlAsSb interfaces did not significantly change the 2DEG mobility. With the insertion of a two monolayer InAlAs at the InGaAs/AlAsSb interfaces, the interface roughness scattering is reduced and the mobility greatly increased. The room temperature 2DEG mobility shows 66% improvement from 1.63 × 10{sup 3} cm{sup 2}/V·s to 2.71 × 10{sup 3} cm{sup 2}/V·s for a 3 nm InGaAs well.

Authors:
; ;  [1]; ;  [1];  [2];  [3]
  1. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)
  2. (United States)
  3. Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)
Publication Date:
OSTI Identifier:
22271110
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 115; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM ARSENIDES; ANTIMONIDES; COMPARATIVE EVALUATIONS; DOPED MATERIALS; ELECTRON GAS; ELECTRON MOBILITY; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; INTERFACES; LAYERS; MODULATION; QUANTUM WELLS; TEMPERATURE RANGE 0273-0400 K

Citation Formats

Huang, Cheng-Ying, E-mail: cyhuang@ece.ucsb.edu, Law, Jeremy J. M., Rodwell, Mark J. W., Lu, Hong, Gossard, Arthur C., Materials Department, University of California, Santa Barbara, California 93106-5050, and Jena, Debdeep. Two dimensional electron transport in modulation-doped In{sub 0.53}Ga{sub 0.47}As/AlAs{sub 0.56}Sb{sub 0.44} ultrathin quantum wells. United States: N. p., 2014. Web. doi:10.1063/1.4869498.
Huang, Cheng-Ying, E-mail: cyhuang@ece.ucsb.edu, Law, Jeremy J. M., Rodwell, Mark J. W., Lu, Hong, Gossard, Arthur C., Materials Department, University of California, Santa Barbara, California 93106-5050, & Jena, Debdeep. Two dimensional electron transport in modulation-doped In{sub 0.53}Ga{sub 0.47}As/AlAs{sub 0.56}Sb{sub 0.44} ultrathin quantum wells. United States. doi:10.1063/1.4869498.
Huang, Cheng-Ying, E-mail: cyhuang@ece.ucsb.edu, Law, Jeremy J. M., Rodwell, Mark J. W., Lu, Hong, Gossard, Arthur C., Materials Department, University of California, Santa Barbara, California 93106-5050, and Jena, Debdeep. Fri . "Two dimensional electron transport in modulation-doped In{sub 0.53}Ga{sub 0.47}As/AlAs{sub 0.56}Sb{sub 0.44} ultrathin quantum wells". United States. doi:10.1063/1.4869498.
@article{osti_22271110,
title = {Two dimensional electron transport in modulation-doped In{sub 0.53}Ga{sub 0.47}As/AlAs{sub 0.56}Sb{sub 0.44} ultrathin quantum wells},
author = {Huang, Cheng-Ying, E-mail: cyhuang@ece.ucsb.edu and Law, Jeremy J. M. and Rodwell, Mark J. W. and Lu, Hong and Gossard, Arthur C. and Materials Department, University of California, Santa Barbara, California 93106-5050 and Jena, Debdeep},
abstractNote = {We have investigated the growth and electron transport in In{sub 0.53}Ga{sub 0.47}As/AlAs{sub 0.56}Sb{sub 0.44} two dimensional electron gases (2DEG) and compared their properties with In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As 2DEGs. For 10 nm thick InGaAs wells, the electron mobility of InGaAs/AlAsSb 2DEGs is comparable to that of InGaAs/InAlAs 2DEGs. Upon thinning the wells to 3 nm, the 2DEG mobility is degraded quickly and stronger interface roughness scattering is observed for InGaAs/AlAsSb heterointerfaces than for InGaAs/InAlAs heterointerfaces. Changing the group-V exposure between As and Sb during growth interruptions at the InGaAs/AlAsSb interfaces did not significantly change the 2DEG mobility. With the insertion of a two monolayer InAlAs at the InGaAs/AlAsSb interfaces, the interface roughness scattering is reduced and the mobility greatly increased. The room temperature 2DEG mobility shows 66% improvement from 1.63 × 10{sup 3} cm{sup 2}/V·s to 2.71 × 10{sup 3} cm{sup 2}/V·s for a 3 nm InGaAs well.},
doi = {10.1063/1.4869498},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 12,
volume = 115,
place = {United States},
year = {2014},
month = {3}
}