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Title: Tuning of opto-electronic properties of Cu{sub 2}SnS{sub 3} thin films through variation of stoichiometry

Abstract

Copper Tin Sulfide (Cu{sub 2}SnS{sub 3}), one of the promising absorber layer for thin film solar cell, was successfully deposited on glass substrate maintained at a substrate temperature of 325° C by chemical spray pyrolysis technique (CSP). Variation in copper concentration in the precursor solution affects the structural, optical and electrical properties of the films. XRD results proved the tetragonal structure (with preferential orientation along (112) orientation) of the samples. All samples were p-type and their band gap and resistivity decreased with increase in Copper concentration. A minimum resistivity of 1.6×10{sup −3} Ω.cm was obtained for an optimum copper concentration.

Authors:
; ;  [1]
  1. Thin Film Photovoltaic Division, Department of Physics, Cochin University of Science and Technology, Cochin-682022 (India)
Publication Date:
OSTI Identifier:
22269406
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1591; Journal Issue: 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COPPER; DEPOSITS; ELECTRICAL PROPERTIES; GLASS; LAYERS; PYROLYSIS; SOLAR CELLS; SUBSTRATES; THIN FILMS; TIN SULFIDES; X-RAY DIFFRACTION

Citation Formats

Sunny, Gincy, E-mail: kpv@cusat.ac.in, Kartha, C. Sudha, E-mail: kpv@cusat.ac.in, and Vijayakumar, K. P., E-mail: kpv@cusat.ac.in. Tuning of opto-electronic properties of Cu{sub 2}SnS{sub 3} thin films through variation of stoichiometry. United States: N. p., 2014. Web. doi:10.1063/1.4873100.
Sunny, Gincy, E-mail: kpv@cusat.ac.in, Kartha, C. Sudha, E-mail: kpv@cusat.ac.in, & Vijayakumar, K. P., E-mail: kpv@cusat.ac.in. Tuning of opto-electronic properties of Cu{sub 2}SnS{sub 3} thin films through variation of stoichiometry. United States. doi:10.1063/1.4873100.
Sunny, Gincy, E-mail: kpv@cusat.ac.in, Kartha, C. Sudha, E-mail: kpv@cusat.ac.in, and Vijayakumar, K. P., E-mail: kpv@cusat.ac.in. 2014. "Tuning of opto-electronic properties of Cu{sub 2}SnS{sub 3} thin films through variation of stoichiometry". United States. doi:10.1063/1.4873100.
@article{osti_22269406,
title = {Tuning of opto-electronic properties of Cu{sub 2}SnS{sub 3} thin films through variation of stoichiometry},
author = {Sunny, Gincy, E-mail: kpv@cusat.ac.in and Kartha, C. Sudha, E-mail: kpv@cusat.ac.in and Vijayakumar, K. P., E-mail: kpv@cusat.ac.in},
abstractNote = {Copper Tin Sulfide (Cu{sub 2}SnS{sub 3}), one of the promising absorber layer for thin film solar cell, was successfully deposited on glass substrate maintained at a substrate temperature of 325° C by chemical spray pyrolysis technique (CSP). Variation in copper concentration in the precursor solution affects the structural, optical and electrical properties of the films. XRD results proved the tetragonal structure (with preferential orientation along (112) orientation) of the samples. All samples were p-type and their band gap and resistivity decreased with increase in Copper concentration. A minimum resistivity of 1.6×10{sup −3} Ω.cm was obtained for an optimum copper concentration.},
doi = {10.1063/1.4873100},
journal = {AIP Conference Proceedings},
number = 1,
volume = 1591,
place = {United States},
year = 2014,
month = 4
}
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