Identification of dominant scattering mechanism in epitaxial graphene on SiC
- Research and Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190 (China)
- Nanoscale Physics and Devices Laboratory, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190 (China)
A scheme of identification of scattering mechanisms in epitaxial graphene (EG) on SiC substrate is developed and applied to three EG samples grown on SiC (0001), (112{sup ¯}0), and (101{sup ¯}0) substrates. Hall measurements combined with defect detection technique enable us to evaluate the individual contributions to the carrier scatterings by defects and by substrates. It is found that the dominant scatterings can be due to either substrate or defects, dependent on the substrate orientations. The EG on SiC (112{sup ¯}0) exhibits a better control over the two major scattering mechanisms and achieves the highest mobility even with a high carrier concentration, promising for high performance graphene-based electronic devices. The method developed here will shed light on major aspects in governing carrier transport in EG to harness it effectively.
- OSTI ID:
- 22269206
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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