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Title: Morphology dependence of interfacial oxidation states of gallium arsenide under near ambient conditions

Abstract

The manipulation of semiconductor surfaces by tuning their electronic properties and surface chemistry is an essential ingredient for key applications in areas such as electronics, sensors, and photovoltaic devices. Here, in-situ surface reactions on gallium arsenide (GaAs) are monitored for two morphologies: a simple planar crystalline surface with (100) orientation and an ensemble of GaAs nanowires, both exposed to oxygen environment. A variety of oxide surface species, with a significant enhancement in oxidation states in the case of nanowires, are detected via near ambient pressure X-ray photoelectron spectroscopy. This enhancement in oxidation of GaAs nanowires is due to their higher surface area and the existence of more active sites for O{sub 2} dissociation.

Authors:
 [1];  [2]; ;  [1];  [2]; ;  [3]
  1. Radiation Laboratory, University of Notre Dame, Notre Dame, Indiana 46556 (United States)
  2. (United States)
  3. Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 (United States)
Publication Date:
OSTI Identifier:
22269194
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; MORPHOLOGY; PHOTOVOLTAIC EFFECT; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; SURFACES; VALENCE; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Zhang, Xueqiang, Department of Chemistry and Biochemistry, University of Notre Dame, Notre Dame, Indiana 46556, Lamere, Edward, Ptasinska, Sylwia, E-mail: Sylwia.Ptasinska.1@nd.edu, Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, Liu, Xinyu, and Furdyna, Jacek K. Morphology dependence of interfacial oxidation states of gallium arsenide under near ambient conditions. United States: N. p., 2014. Web. doi:10.1063/1.4874983.
Zhang, Xueqiang, Department of Chemistry and Biochemistry, University of Notre Dame, Notre Dame, Indiana 46556, Lamere, Edward, Ptasinska, Sylwia, E-mail: Sylwia.Ptasinska.1@nd.edu, Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, Liu, Xinyu, & Furdyna, Jacek K. Morphology dependence of interfacial oxidation states of gallium arsenide under near ambient conditions. United States. doi:10.1063/1.4874983.
Zhang, Xueqiang, Department of Chemistry and Biochemistry, University of Notre Dame, Notre Dame, Indiana 46556, Lamere, Edward, Ptasinska, Sylwia, E-mail: Sylwia.Ptasinska.1@nd.edu, Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, Liu, Xinyu, and Furdyna, Jacek K. 2014. "Morphology dependence of interfacial oxidation states of gallium arsenide under near ambient conditions". United States. doi:10.1063/1.4874983.
@article{osti_22269194,
title = {Morphology dependence of interfacial oxidation states of gallium arsenide under near ambient conditions},
author = {Zhang, Xueqiang and Department of Chemistry and Biochemistry, University of Notre Dame, Notre Dame, Indiana 46556 and Lamere, Edward and Ptasinska, Sylwia, E-mail: Sylwia.Ptasinska.1@nd.edu and Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 and Liu, Xinyu and Furdyna, Jacek K.},
abstractNote = {The manipulation of semiconductor surfaces by tuning their electronic properties and surface chemistry is an essential ingredient for key applications in areas such as electronics, sensors, and photovoltaic devices. Here, in-situ surface reactions on gallium arsenide (GaAs) are monitored for two morphologies: a simple planar crystalline surface with (100) orientation and an ensemble of GaAs nanowires, both exposed to oxygen environment. A variety of oxide surface species, with a significant enhancement in oxidation states in the case of nanowires, are detected via near ambient pressure X-ray photoelectron spectroscopy. This enhancement in oxidation of GaAs nanowires is due to their higher surface area and the existence of more active sites for O{sub 2} dissociation.},
doi = {10.1063/1.4874983},
journal = {Applied Physics Letters},
number = 18,
volume = 104,
place = {United States},
year = 2014,
month = 5
}
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