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Title: Topological crystalline insulator Pb{sub x}Sn{sub 1-x}Te thin films on SrTiO{sub 3} (001) with tunable Fermi levels

Abstract

In this letter, we report a systematic study of topological crystalline insulator Pb{sub x}Sn{sub 1-x}Te (0 < x < 1) thin films grown by molecular beam epitaxy on SrTiO{sub 3}(001). Two domains of Pb{sub x}Sn{sub 1-x}Te thin films with intersecting angle of α ≈ 45° were confirmed by reflection high energy diffraction, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy (ARPES). ARPES study of Pb{sub x}Sn{sub 1-x}Te thin films demonstrated that the Fermi level of PbTe could be tuned by altering the temperature of substrate whereas SnTe cannot. An M-shaped valance band structure was observed only in SnTe but PbTe is in a topological trivial state with a large gap. In addition, co-evaporation of SnTe and PbTe results in an equivalent variation of Pb concentration as well as the Fermi level of Pb{sub x}Sn{sub 1-x}Te thin films.

Authors:
; ; ; ; ; ; ;  [1];  [1];  [2];  [3]; ; ;  [4]
  1. State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084 (China)
  2. (China)
  3. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China)
  4. Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)
Publication Date:
OSTI Identifier:
22269161
Resource Type:
Journal Article
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 2; Journal Issue: 5; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 2166-532X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DIFFRACTION; EVAPORATION; FERMI LEVEL; LEAD TELLURIDES; MOLECULAR BEAM EPITAXY; PHOTOEMISSION; SCANNING TUNNELING MICROSCOPY; SPECTROSCOPY; STRONTIUM TITANATES; SUBSTRATES; THIN FILMS; TIN TELLURIDES

Citation Formats

Guo, Hua, Liu, Jun-Wei, Wang, Zhen-Yu, Wu, Rui, Ji, Shuai-Hua, Duan, Wen-Hui, Chen, Xi, E-mail: xc@mail.tsinghua.edu.cn, Xue, Qi-Kun, E-mail: qkxue@mail.tsinghua.edu.cn, Yan, Chen-Hui, Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, Zhang, Zhi-Dong, Wang, Li-Li, He, Ke, and Ma, Xu-Cun. Topological crystalline insulator Pb{sub x}Sn{sub 1-x}Te thin films on SrTiO{sub 3} (001) with tunable Fermi levels. United States: N. p., 2014. Web. doi:10.1063/1.4876637.
Guo, Hua, Liu, Jun-Wei, Wang, Zhen-Yu, Wu, Rui, Ji, Shuai-Hua, Duan, Wen-Hui, Chen, Xi, E-mail: xc@mail.tsinghua.edu.cn, Xue, Qi-Kun, E-mail: qkxue@mail.tsinghua.edu.cn, Yan, Chen-Hui, Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, Zhang, Zhi-Dong, Wang, Li-Li, He, Ke, & Ma, Xu-Cun. Topological crystalline insulator Pb{sub x}Sn{sub 1-x}Te thin films on SrTiO{sub 3} (001) with tunable Fermi levels. United States. doi:10.1063/1.4876637.
Guo, Hua, Liu, Jun-Wei, Wang, Zhen-Yu, Wu, Rui, Ji, Shuai-Hua, Duan, Wen-Hui, Chen, Xi, E-mail: xc@mail.tsinghua.edu.cn, Xue, Qi-Kun, E-mail: qkxue@mail.tsinghua.edu.cn, Yan, Chen-Hui, Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, Zhang, Zhi-Dong, Wang, Li-Li, He, Ke, and Ma, Xu-Cun. Thu . "Topological crystalline insulator Pb{sub x}Sn{sub 1-x}Te thin films on SrTiO{sub 3} (001) with tunable Fermi levels". United States. doi:10.1063/1.4876637.
@article{osti_22269161,
title = {Topological crystalline insulator Pb{sub x}Sn{sub 1-x}Te thin films on SrTiO{sub 3} (001) with tunable Fermi levels},
author = {Guo, Hua and Liu, Jun-Wei and Wang, Zhen-Yu and Wu, Rui and Ji, Shuai-Hua and Duan, Wen-Hui and Chen, Xi, E-mail: xc@mail.tsinghua.edu.cn and Xue, Qi-Kun, E-mail: qkxue@mail.tsinghua.edu.cn and Yan, Chen-Hui and Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 and Zhang, Zhi-Dong and Wang, Li-Li and He, Ke and Ma, Xu-Cun},
abstractNote = {In this letter, we report a systematic study of topological crystalline insulator Pb{sub x}Sn{sub 1-x}Te (0 < x < 1) thin films grown by molecular beam epitaxy on SrTiO{sub 3}(001). Two domains of Pb{sub x}Sn{sub 1-x}Te thin films with intersecting angle of α ≈ 45° were confirmed by reflection high energy diffraction, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy (ARPES). ARPES study of Pb{sub x}Sn{sub 1-x}Te thin films demonstrated that the Fermi level of PbTe could be tuned by altering the temperature of substrate whereas SnTe cannot. An M-shaped valance band structure was observed only in SnTe but PbTe is in a topological trivial state with a large gap. In addition, co-evaporation of SnTe and PbTe results in an equivalent variation of Pb concentration as well as the Fermi level of Pb{sub x}Sn{sub 1-x}Te thin films.},
doi = {10.1063/1.4876637},
journal = {APL Materials},
issn = {2166-532X},
number = 5,
volume = 2,
place = {United States},
year = {2014},
month = {5}
}