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Title: Crystallographically tilted and partially strain relaxed GaN grown on inclined (111) facets etched on Si(100) substrate

Abstract

High resolution X-ray diffractometry (HR-XRD), Photoluminescence, Raman spectroscopy, and Transmission electron microscope measurements are reported for GaN deposited on a conventional Si(111) substrate and on the (111) facets etched on a Si(100) substrate. HR-XRD reciprocal space mappings showed that the GaN(0002) plane is tilted by about 0.63° ± 0.02° away from the exposed Si(111) growth surface for GaN deposited on the patterned Si(100) substrate, while no observable tilt existed between the GaN(0002) and Si(111) planes for GaN deposited on the conventional Si(111) substrate. The ratio of integrated intensities of the yellow to near band edge (NBE) luminescence (I{sub YL}/I{sub NBE}) was determined to be about one order of magnitude lower in the case of GaN deposited on the patterned Si(100) substrate compared with GaN deposited on the conventional Si(111) substrate. The Raman E{sub 2}(high) optical phonon mode at 565.224 ± 0.001 cm{sup −1} with a narrow full width at half maximum of 1.526 ± 0.002 cm{sup −1} was measured, for GaN deposited on the patterned Si(100) indicating high material quality. GaN deposition within the trench etched on the Si(100) substrate occurred via diffusion and mass-transport limited mechanism. This resulted in a differential GaN layer thickness from the top (i.e., 1.8 μm) of the trench to the bottom (i.e., 0.3 μm)more » of the trench. Mixed-type dislocation constituted about 80% of the total dislocations in the GaN grown on the inclined Si(111) surface etched on Si(100)« less

Authors:
 [1];  [2];  [3];  [4]; ;  [5];  [6]; ;  [7];  [1];  [2];  [2]
  1. Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)
  2. (Singapore)
  3. Singapore Institute of Technology, 10 Dover Drive, Singapore 138683 (Singapore)
  4. Singapore-MIT Alliance, National University of Singapore, Singapore 117576 (Singapore)
  5. Institute of Materials Research and Engineering, 3 Research Link, 117602 Singapore (Singapore)
  6. Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, 117603 Singapore (Singapore)
  7. School of Physical and Mathematical Sciences, Nanyang Technological University, SPMS-03-01, 21 Nanyang Link (Singapore)
Publication Date:
OSTI Identifier:
22267779
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DISLOCATIONS; GALLIUM NITRIDES; PHONONS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; STRAINS; SUBSTRATES; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION

Citation Formats

Ansah Antwi, K. K., Institute of Materials Research and Engineering, 3 Research Link, 117602 Singapore, Soh, C. B., Wee, Q., Tan, Rayson J. N., Tan, H. R., Yang, P., Sun, L. F., Shen, Z. X., Chua, S. J., E-mail: elecsj@nus.edu.sg, Institute of Materials Research and Engineering, 3 Research Link, 117602 Singapore, and Singapore-MIT Alliance, National University of Singapore, Singapore 117576. Crystallographically tilted and partially strain relaxed GaN grown on inclined (111) facets etched on Si(100) substrate. United States: N. p., 2013. Web. doi:10.1063/1.4856275.
Ansah Antwi, K. K., Institute of Materials Research and Engineering, 3 Research Link, 117602 Singapore, Soh, C. B., Wee, Q., Tan, Rayson J. N., Tan, H. R., Yang, P., Sun, L. F., Shen, Z. X., Chua, S. J., E-mail: elecsj@nus.edu.sg, Institute of Materials Research and Engineering, 3 Research Link, 117602 Singapore, & Singapore-MIT Alliance, National University of Singapore, Singapore 117576. Crystallographically tilted and partially strain relaxed GaN grown on inclined (111) facets etched on Si(100) substrate. United States. doi:10.1063/1.4856275.
Ansah Antwi, K. K., Institute of Materials Research and Engineering, 3 Research Link, 117602 Singapore, Soh, C. B., Wee, Q., Tan, Rayson J. N., Tan, H. R., Yang, P., Sun, L. F., Shen, Z. X., Chua, S. J., E-mail: elecsj@nus.edu.sg, Institute of Materials Research and Engineering, 3 Research Link, 117602 Singapore, and Singapore-MIT Alliance, National University of Singapore, Singapore 117576. 2013. "Crystallographically tilted and partially strain relaxed GaN grown on inclined (111) facets etched on Si(100) substrate". United States. doi:10.1063/1.4856275.
@article{osti_22267779,
title = {Crystallographically tilted and partially strain relaxed GaN grown on inclined (111) facets etched on Si(100) substrate},
author = {Ansah Antwi, K. K. and Institute of Materials Research and Engineering, 3 Research Link, 117602 Singapore and Soh, C. B. and Wee, Q. and Tan, Rayson J. N. and Tan, H. R. and Yang, P. and Sun, L. F. and Shen, Z. X. and Chua, S. J., E-mail: elecsj@nus.edu.sg and Institute of Materials Research and Engineering, 3 Research Link, 117602 Singapore and Singapore-MIT Alliance, National University of Singapore, Singapore 117576},
abstractNote = {High resolution X-ray diffractometry (HR-XRD), Photoluminescence, Raman spectroscopy, and Transmission electron microscope measurements are reported for GaN deposited on a conventional Si(111) substrate and on the (111) facets etched on a Si(100) substrate. HR-XRD reciprocal space mappings showed that the GaN(0002) plane is tilted by about 0.63° ± 0.02° away from the exposed Si(111) growth surface for GaN deposited on the patterned Si(100) substrate, while no observable tilt existed between the GaN(0002) and Si(111) planes for GaN deposited on the conventional Si(111) substrate. The ratio of integrated intensities of the yellow to near band edge (NBE) luminescence (I{sub YL}/I{sub NBE}) was determined to be about one order of magnitude lower in the case of GaN deposited on the patterned Si(100) substrate compared with GaN deposited on the conventional Si(111) substrate. The Raman E{sub 2}(high) optical phonon mode at 565.224 ± 0.001 cm{sup −1} with a narrow full width at half maximum of 1.526 ± 0.002 cm{sup −1} was measured, for GaN deposited on the patterned Si(100) indicating high material quality. GaN deposition within the trench etched on the Si(100) substrate occurred via diffusion and mass-transport limited mechanism. This resulted in a differential GaN layer thickness from the top (i.e., 1.8 μm) of the trench to the bottom (i.e., 0.3 μm) of the trench. Mixed-type dislocation constituted about 80% of the total dislocations in the GaN grown on the inclined Si(111) surface etched on Si(100)},
doi = {10.1063/1.4856275},
journal = {Journal of Applied Physics},
number = 24,
volume = 114,
place = {United States},
year = 2013,
month =
}
  • The microstructure of strain-relaxed Si{sub 1{minus}x}Ge{sub x}/Si films that relaxed by different dislocation nucleation mechanisms has been investigated using x-ray microdiffraction with a diffracted beam footprint of 1{mu}m{times}5{mu}m. Intensity variations in the x-ray microtopographs of samples having step-graded intermediate layers, which relaxed by dislocation multiplication, are due to the presence of local tilted regions which are larger in area than the diffracted x-ray beam. In contrast, microtopographs of uniform composition layers, which relaxed by surface roughening and subsequent random dislocation nucleation, show little intensity contrast as the local tilted regions in these samples are much smaller than the diffracted x-raymore » beam. The difference in microstructure arises from the different distributions of 60{degree} misfit dislocations in these two types of samples. {copyright} {ital 1999 American Institute of Physics.}« less
  • Epitaxial growth of a compressively strained Ge quantum well (QW) on an ultrathin, 345 nm thick, Si{sub 0.4}Ge{sub 0.6}/LT-Si{sub 0.4}Ge{sub 0.6}/Si(001) virtual substrate (VS) has been demonstrated. The VS, grown with a low temperature Si{sub 0.4}Ge{sub 0.6} seed layer on a Si(001) substrate, is found to be fully relaxed and the Ge QW is fully strained. The temperature dependence of Hall mobility and carrier density clearly indicates a two-dimensional hole gas in the Ge QW. At room temperature, which is more relevant for electronic devices applications, the samples show a very high Hall mobility of 1235 cm{sup 2} V{sup -1}more » s{sup -1} at a carrier density of 2.36x10{sup 12} cm{sup -2}.« less
  • Compressively strained Ge films have been grown on relaxed Si{sub 0.5}Ge{sub 0.5} virtual substrate in ultra high vacuum using molecular beam epitaxy. Structural characterization has shown that the Ge films are compressively strained with partial strain relaxation in a film thicker than 3.0 nm, due to onset of island nucleation. Photoluminescence spectra exhibit the splitting of degenerate Ge valence band into heavy hole and light hole bands with a broad direct band gap emission peak around 0.81 eV. Temperature and excitation power dependent emission characteristics have been studied to investigate the mechanism of luminescence quenching at high temperatures and themore » role of non-radiative recombination centers.« less
  • Strained Ge islands have been grown on fully relaxed Si{sub 0.5}Ge{sub 0.5} substrate by pulsed laser ablation technique. The formation of strained Ge islands has been found for film with higher thickness following Stranski–Krastanov growth mechanism. The variation of strain with changing Ge layer thickness has been analyzed using Raman spectroscopy and high-resolution X-ray diffraction techniques. X-ray photoelectron spectra have shown the absence of any Si-Ge intermixing and oxidation of Ge films. A strong no-phonon photoluminescence emission from Ge islands has been observed, showing the superior optical characteristics of the islands grown on relaxed substrate.
  • High-quality strain-relaxed SiGe templates with a low threading dislocation density and smooth surface are critical for device performance. In this work, SiGe films on low temperature Si buffer layers were grown by solid-source molecular beam epitaxy and characterized by atomic force microscope, double-axis x-ray diffraction, photoluminescence spectroscopy, and Raman spectroscopy. Effects of the growth temperature and the thickness of the low temperature Si buffer were studied. It was demonstrated that when using proper growth conditions for the low temperature Si buffer the Si buffer became tensily strained and gave rise to the compliant effect. The lattice mismatch between the SiGemore » and the Si buffer layer was reduced. A 500 nm Si{sub 0.7}Ge{sub 0.3} film with a low threading dislocation density as well as smooth surface was obtained by this method. {copyright} 2001 American Institute of Physics.« less