Study of valence-band intersublevel transitions in InAs/GaAs quantum dots-in-well infrared photodetectors
- Key Laboratory of Artificial Structures and Quantum Control, Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China)
- Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106 (United States)
The n-type quantum dot (QD) and dots-in-well (DWELL) infrared photodetectors, in general, display bias-dependent multiple-band response as a result of optical transitions between different quantum levels. Here, we present a unique characteristic of the p-type hole response, a well-preserved spectral profile, due to the much reduced tunneling probability of holes compared to electrons. This feature remains in a DWELL detector, with the dominant transition contributing to the response occurring between the QD ground state and the quantum-well states. The bias-independent response will benefit applications where single-color detection is desired and also allows achieving optimum performance by optimizing the bias.
- OSTI ID:
- 22267699
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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