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Title: Optical and carrier transport properties of graphene oxide based crystalline-Si/organic Schottky junction solar cells

Abstract

We investigated the graphene oxide (GO) based n-type crystalline silicon (c-Si)/conductive poly(ethylene dioxythiophene):poly(styrenesulfonate)(PEDOT:PSS) Schottky junction devices with optical characterization and carrier transport measurement techniques. The optical transmittance in the UV region decreased markedly for the films with increasing the concentration of GO whereas it increased markedly in the visible-infrared regions. Spectroscopic ellipsometry revealed that the ordinary and extraordinary index of refraction increased with increasing the concentration of GO. The hole mobility also increased from 1.14 for pristine film to 1.85 cm{sup 2}/V s for the 12–15 wt. % GO modified film with no significant increases of carrier concentration. The highest conductivity was found for a 15 wt. % GO modified PEDOT:PSS film: the c-Si/PEDOT:PSS:GO device using this sample exhibited a relatively high power conversion efficiency of 11.04%. In addition, the insertion of a 2–3 nm-thick GO thin layer at the c-Si/PEDOT:PSS interface suppressed the carrier recombination efficiency of dark electron and photo-generated hole at the anode, resulting in the increased photovoltaic performance. This study indicates that the GO can be good candidates for hole transporting layer of c-Si/PEDOT:PSS Schottky junction solar cell.

Authors:
; ; ; ; ; ;  [1]
  1. Graduate School of Science and Engineering, Saitama University, Saitama 338-8570 (Japan)
Publication Date:
OSTI Identifier:
22266101
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 114; Journal Issue: 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANODES; CARRIERS; CONCENTRATION RATIO; CONNECTORS; ELECTRIC CONTACTS; ETHYLENE; GRAPHENE; HOLE MOBILITY; OXIDES; PHOTOVOLTAIC EFFECT; REFRACTIVE INDEX; SEMICONDUCTOR JUNCTIONS; SILICON; SOLAR CELLS; SUPERCONDUCTING JUNCTIONS; THIN FILMS

Citation Formats

Khatri, I., Tang, Z., Hiate, T., Liu, Q., Ishikawa, R., Ueno, K., and Shirai, H. Optical and carrier transport properties of graphene oxide based crystalline-Si/organic Schottky junction solar cells. United States: N. p., 2013. Web. doi:10.1063/1.4847515.
Khatri, I., Tang, Z., Hiate, T., Liu, Q., Ishikawa, R., Ueno, K., & Shirai, H. Optical and carrier transport properties of graphene oxide based crystalline-Si/organic Schottky junction solar cells. United States. https://doi.org/10.1063/1.4847515
Khatri, I., Tang, Z., Hiate, T., Liu, Q., Ishikawa, R., Ueno, K., and Shirai, H. 2013. "Optical and carrier transport properties of graphene oxide based crystalline-Si/organic Schottky junction solar cells". United States. https://doi.org/10.1063/1.4847515.
@article{osti_22266101,
title = {Optical and carrier transport properties of graphene oxide based crystalline-Si/organic Schottky junction solar cells},
author = {Khatri, I. and Tang, Z. and Hiate, T. and Liu, Q. and Ishikawa, R. and Ueno, K. and Shirai, H.},
abstractNote = {We investigated the graphene oxide (GO) based n-type crystalline silicon (c-Si)/conductive poly(ethylene dioxythiophene):poly(styrenesulfonate)(PEDOT:PSS) Schottky junction devices with optical characterization and carrier transport measurement techniques. The optical transmittance in the UV region decreased markedly for the films with increasing the concentration of GO whereas it increased markedly in the visible-infrared regions. Spectroscopic ellipsometry revealed that the ordinary and extraordinary index of refraction increased with increasing the concentration of GO. The hole mobility also increased from 1.14 for pristine film to 1.85 cm{sup 2}/V s for the 12–15 wt. % GO modified film with no significant increases of carrier concentration. The highest conductivity was found for a 15 wt. % GO modified PEDOT:PSS film: the c-Si/PEDOT:PSS:GO device using this sample exhibited a relatively high power conversion efficiency of 11.04%. In addition, the insertion of a 2–3 nm-thick GO thin layer at the c-Si/PEDOT:PSS interface suppressed the carrier recombination efficiency of dark electron and photo-generated hole at the anode, resulting in the increased photovoltaic performance. This study indicates that the GO can be good candidates for hole transporting layer of c-Si/PEDOT:PSS Schottky junction solar cell.},
doi = {10.1063/1.4847515},
url = {https://www.osti.gov/biblio/22266101}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 23,
volume = 114,
place = {United States},
year = {Sat Dec 21 00:00:00 EST 2013},
month = {Sat Dec 21 00:00:00 EST 2013}
}