Study of the electrical conductivity at finite temperature in 2D Si- MOSFETs
- Research Group ESNPS, Physics Department, University Ibn Zohr, Faculty of Sciences, B.P 8106, Hay Dakhla, 80000 Agadir (Morocco)
- Faculté des Sciences et Techniques de Mohammedia, Département de physique. B.P 146 Quartier Yasmina Mohammedia (Morocco)
- Laboratoire MSTI, Ecole Supérieure de Technologie d'Agadir, B.P: 33/S Agadir (Morocco)
We investigate the low temperature density dependent conductivity of two dimensional electron systems in zero magnetic field for sample Si-15 MOSFETs. The first purpose of this paper is to establish that the knee of the conductivity σ{sub 0} (σ{sub 0} is the T = 0.3 conductivity obtained by linear extrapolation of the curves of σ (T) for different values of electron density, n{sub s}) as a function of the carrier densities n{sub s} for T = 0.3 K, observed by Lai et al. and Limouny et al. in previous work for two different samples, is independent of temperature. The second aim is the determination of the critical density, n{sub c}, of the metal-insulator transition. Many methods are used in this investigation of n{sub c} which have been already used for other samples. The motivation behind this last study is the observation of many values of n{sub c} that have been obtained from different methods and that are slightly different. We will use in this study three methods with the intention to infer which one is more appropriate to obtain n{sub c}.
- OSTI ID:
- 22264045
- Journal Information:
- AIP Conference Proceedings, Vol. 1574, Issue 1; Conference: International cryogenic materials conference, Anchorage, AK (United States), 17-21 Jun 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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