Growth mechanism of Cobalt(II) Phthalocyanine(CoPc) thin films on SiO{sub 2} and muscovite substrates
Abstract
Thin films of Cobalt(II) Phthalocyanine (CoPc) were grown by thermal evaporation technique on two different substrates namely SiO{sub 2} and atomically cleaned muscovite mica(001) at various substrate temperatures. Deposition rate has been maintained to 0.3Å/sec during the growth of the films. The growth process is studied by means of atomic force microscopy (AFM). Films on SiO{sub 2} exhibit only three-dimensional islands and uniformity of these islands improved with substrate temperatures, whereas films on mica (001) consist of long oriented percolated structures. The results revealed that the growth mechanism of CoPc strongly depends on substrate temperatures as well as nature of substrate used. Optical properties were characterized by UV-Visible spectroscopy and structural properties were studied using X-ray diffraction.
- Authors:
-
- Department of Physics, Indian Institute of Technology Guwahati, Guwahati-781039 (India)
- Centre for Nano Technology, Indian Institute of Technology Guwahati, Guwahati-781039 (India)
- Publication Date:
- OSTI Identifier:
- 22264005
- Resource Type:
- Journal Article
- Journal Name:
- AIP Conference Proceedings
- Additional Journal Information:
- Journal Volume: 1576; Journal Issue: 1; Conference: OMTAT 2013: 2. international conference on optoelectronic materials and thin films for advanced technology, Kochi, Kerala (India), 3-5 Jan 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; ATOMIC FORCE MICROSCOPY; COBALT; DEPOSITION; MUSCOVITE; OPTICAL PROPERTIES; PHTHALOCYANINES; SILICA; SILICON OXIDES; SPECTROSCOPY; SUBSTRATES; THIN FILMS; X-RAY DIFFRACTION
Citation Formats
Gedda, Murali, Subbarao, Nimmakayala V. V., and Goswami, Dipak K., E-mail: dkg@iitg.ernet.in. Growth mechanism of Cobalt(II) Phthalocyanine(CoPc) thin films on SiO{sub 2} and muscovite substrates. United States: N. p., 2014.
Web. doi:10.1063/1.4862007.
Gedda, Murali, Subbarao, Nimmakayala V. V., & Goswami, Dipak K., E-mail: dkg@iitg.ernet.in. Growth mechanism of Cobalt(II) Phthalocyanine(CoPc) thin films on SiO{sub 2} and muscovite substrates. United States. https://doi.org/10.1063/1.4862007
Gedda, Murali, Subbarao, Nimmakayala V. V., and Goswami, Dipak K., E-mail: dkg@iitg.ernet.in. 2014.
"Growth mechanism of Cobalt(II) Phthalocyanine(CoPc) thin films on SiO{sub 2} and muscovite substrates". United States. https://doi.org/10.1063/1.4862007.
@article{osti_22264005,
title = {Growth mechanism of Cobalt(II) Phthalocyanine(CoPc) thin films on SiO{sub 2} and muscovite substrates},
author = {Gedda, Murali and Subbarao, Nimmakayala V. V. and Goswami, Dipak K., E-mail: dkg@iitg.ernet.in},
abstractNote = {Thin films of Cobalt(II) Phthalocyanine (CoPc) were grown by thermal evaporation technique on two different substrates namely SiO{sub 2} and atomically cleaned muscovite mica(001) at various substrate temperatures. Deposition rate has been maintained to 0.3Å/sec during the growth of the films. The growth process is studied by means of atomic force microscopy (AFM). Films on SiO{sub 2} exhibit only three-dimensional islands and uniformity of these islands improved with substrate temperatures, whereas films on mica (001) consist of long oriented percolated structures. The results revealed that the growth mechanism of CoPc strongly depends on substrate temperatures as well as nature of substrate used. Optical properties were characterized by UV-Visible spectroscopy and structural properties were studied using X-ray diffraction.},
doi = {10.1063/1.4862007},
url = {https://www.osti.gov/biblio/22264005},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1576,
place = {United States},
year = {Tue Jan 28 00:00:00 EST 2014},
month = {Tue Jan 28 00:00:00 EST 2014}
}