On the reliable analysis of indium mole fraction within In{sub x}Ga{sub 1−x}N quantum wells using atom probe tomography

Journal Article · Mon Apr 14 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4871510· OSTI ID:22262595

Riley, James R.; Lauhon, Lincoln J. ^[1]; Detchprohm, Theeradetch; Wetzel, Christian ^[2]

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1. Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60201 (United States)
2. Future Chips Constellation and Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

Surface crystallography and polarity are shown to influence the detection probability of In, Ga, and N ions during atom probe tomography analysis of In{sub x}Ga{sub 1−x}N m-plane, c-plane, and (202{sup ¯}1{sup ¯}) quantum wells. A N deficit is observed in regions of the reconstruction generated from Ga-polar surfaces, and the probability of detecting group-III atoms is lower in In{sub x}Ga{sub 1−x}N quantum wells than in GaN barrier layers. Despite these artifacts, the detected In mole fraction is consistent throughout a given quantum well regardless of the crystal orientation of the quantum well or the evaporation surface from which the reconstruction was generated.

• OSTI ID: 22262595
• Journal Information: Applied Physics Letters, Vol. 104, Issue 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMS
CRYSTALLOGRAPHY
GALLIUM NITRIDES
INDIUM
NITROGEN IONS
QUANTUM WELLS
SURFACES
TOMOGRAPHY