Energy band line-up of atomic layer deposited Al{sub 2}O{sub 3} on β-Ga{sub 2}O{sub 3}

Journal Article · Mon Apr 21 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4873546· OSTI ID:22262556

Hung, Ting-Hsiang; Nath, Digbijoy N.; Sung Park, Pil; Polchinski, Craig; Rajan, Siddharth ^[1]; Sasaki, Kohei; Kuramata, Akito ^[2]

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1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
2. Tamura Corporation, 2–3–1 Hirosedai, Sayama, Saitama 350–1328 (Japan)

Electrical properties of atomic layer deposited Al{sub 2}O{sub 3}/β-Ga{sub 2}O{sub 3} interface were investigated. We determined the conduction band offset and interface charge density of Al{sub 2}O{sub 3}/β-Ga{sub 2}O{sub 3} interface by analyzing the capacitance-voltage characteristics. The conduction band offset at the Al{sub 2}O{sub 3}/β-Ga{sub 2}O{sub 3} interface was found to be 1.7 eV. A large positive sheet charge density of 3.6 × 10{sup 12} cm{sup −2} is induced at the Al{sub 2}O{sub 3}/β-Ga{sub 2}O{sub 3} interface, which caused a non-zero field of 0.7 MV/cm in the Al{sub 2}O{sub 3} under flat-band conditions in the β-Ga{sub 2}O{sub 3}. The forward current-voltage characteristics were found to be related to trap-assisted tunneling.

• OSTI ID: 22262556
• Journal Information: Applied Physics Letters, Vol. 104, Issue 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
CAPACITANCE
CHARGE DENSITY
DEPOSITION
GALLIUM OXIDES
LAYERS
TUNNEL EFFECT