skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Control of the dephasing process due to many-body interactions among excitons by using non-Markovian effect in GaAs single quantum well

Abstract

We show the coherent control of dephasing process of exciton polarization due to heavy hole-heavy hole and heavy hole-light hole scatterings in a GaAs single quantum well. The memory time of the exction scattering is estimated as 0.47 ps.

Authors:
;  [1]
  1. Department of Physics, Tokyo Institute of Technology, Meguro, Tokyo 152-8551 (Japan)
Publication Date:
OSTI Identifier:
22261903
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; GALLIUM ARSENIDES; INTERACTIONS; MANY-BODY PROBLEM; MARKOV PROCESS; POLARIZATION; QUANTUM WELLS; SCATTERING

Citation Formats

Ogawa, Y., and Minami, F. Control of the dephasing process due to many-body interactions among excitons by using non-Markovian effect in GaAs single quantum well. United States: N. p., 2013. Web. doi:10.1063/1.4848490.
Ogawa, Y., & Minami, F. Control of the dephasing process due to many-body interactions among excitons by using non-Markovian effect in GaAs single quantum well. United States. doi:10.1063/1.4848490.
Ogawa, Y., and Minami, F. Wed . "Control of the dephasing process due to many-body interactions among excitons by using non-Markovian effect in GaAs single quantum well". United States. doi:10.1063/1.4848490.
@article{osti_22261903,
title = {Control of the dephasing process due to many-body interactions among excitons by using non-Markovian effect in GaAs single quantum well},
author = {Ogawa, Y. and Minami, F.},
abstractNote = {We show the coherent control of dephasing process of exciton polarization due to heavy hole-heavy hole and heavy hole-light hole scatterings in a GaAs single quantum well. The memory time of the exction scattering is estimated as 0.47 ps.},
doi = {10.1063/1.4848490},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1566,
place = {United States},
year = {2013},
month = {12}
}