A first-principles core-level XPS study on the boron impurities in germanium crystal

Journal Article · Wed Dec 04 00:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4848275· OSTI ID:22261880

Yamauchi, Jun ^[1]; Yoshimoto, Yoshihide ^[2]; Suwa, Yuji ^[3]

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1. Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Yokohama 223-8522 (Japan)
2. Department of Applied Mathematics and Physics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori, 680-8552 (Japan)
3. Central Research Laboratory, Hitachi, Ltd., Hatoyama, Saitama 350-0395 (Japan)

We systematically investigated the x-ray photoelectron spectroscopy (XPS) core-level shifts and formation energies of boron defects in germanium crystals and compared the results to those in silicon crystals. Both for XPS core-level shifts and formation energies, relationship between defects in Si and Ge is roughly linear. From the similarity in the formation energy, it is expected that the exotic clusters like icosahedral B12 exist in Ge as well as in Si.

• OSTI ID: 22261880
• Journal Information: AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BORON
CRYSTALS
FORMATION HEAT
GERMANIUM
SILICON
X-RAY PHOTOELECTRON SPECTROSCOPY