Surface barrier height for different Al compositions and barrier layer thicknesses in AlGaN/GaN heterostructure field effect transistors

Journal Article · Wed Dec 04 00:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4848451· OSTI ID:22261872

Goyal, Nitin; Fjeldly, Tor A. ^[1]; Iniguez, Benjamin ^[2]

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1. Norwegian University of Science and Technology, Trondheim (Norway)
2. Universitat Rovira i Virgili, Tarragona (Spain)

In this paper, we present a physics based analytical model for the calculation of surface barrier height for given values of barrier layer thicknesses and Al mole fractions. An explicit expression for the two dimensional electron gas density is also developed incorporating the change in polarization charges for different Al mole fractions.

• OSTI ID: 22261872
• Journal Information: AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DENSITY
ELECTRON GAS
FIELD EFFECT TRANSISTORS
GALLIUM NITRIDES
POLARIZATION
THICKNESS