The electronic structure of an S-pair in barrier-less metal/silicon junctions

Journal Article · Wed Dec 04 00:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4848450· OSTI ID:22261871

Kato, K.; Nishi, Y.; Marukame, T.; Mitani, Y. ^[1]

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1. Advanced LSI Technology Laboratory, Toshiba Corporate R and D Center (Japan)

With S atoms doping into a bulk Si, it is revealed through first principles calculations that the highly S concentrated bulk Si is metallic. S atoms can be highly doped in the bulk Si because an S-pair located face to face in adjacent Si lattice sites gains a large energy and forms sp{sup 2} + p{sub z} electronic configurations and extra donor electrons. Schottky junction will be thus barrier-less by the Si metallization, well agreeing with experimental analyses.

• OSTI ID: 22261871
• Journal Information: AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DOPED MATERIALS
ELECTRONIC STRUCTURE
METALS
SEMICONDUCTOR JUNCTIONS
SILICON