Electronic spectrum of a deterministic single-donor device in silicon

Journal Article · Wed Dec 04 00:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4848440· OSTI ID:22261863

Fuechsle, Martin; Miwa, Jill A.; Mahapatra, Suddhasatta; Simmons, Michelle Y. ^[1]; Hollenberg, Lloyd C. L. ^[2]

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1. Centre for Quantum Computation and Communication Technology, University of New South Wales, Sydney, NSW 2052 (Australia)
2. Centre for Quantum Computation and Communication Technology, University of Melbourne, VIC 3010 (Australia)

We report the fabrication of a single-electron transistor (SET) based on an individual phosphorus dopant that is deterministically positioned between the dopant-based electrodes of a transport device in silicon. Electronic characterization at mK-temperatures reveals a charging energy that is very similar to the value expected for isolated P donors in a bulk Si environment. Furthermore, we find indications for bulk-like one-electron excited states in the co-tunneling spectrum of the device, in sharp contrast to previous reports on transport through single dopants.

• OSTI ID: 22261863
• Journal Information: AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DOPED MATERIALS
ELECTRONS
EQUIPMENT
EXCITED STATES
PHOSPHORUS
SILICON
SPECTRA
TUNNEL EFFECT