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Title: Nucleation and growth dynamics of MBE-grown topological insulator Bi{sub 2}Te{sub 3} films on Si (111)

Abstract

Topological insulator Bi{sub 2}Te{sub 3} films have been grown by molecular beam epitaxy on Si (111) substrates. The structural properties of the ultra-thin films and their evolution in morphology during the growth have been investigated. The growth starts by a nucleation of separate islands and subsequently turns into a layer-by-layer growth mode. Despite this, the grown film is found to be single crystalline and fully relaxed from the first atomic layer.

Authors:
; ; ;  [1];  [2]
  1. Peter Grünberg Institut - 9, Forschungszentrum Jülich, 52425 Jülich, Germany and JARA - Fundamentals of Future Information Technologies (Germany)
  2. Peter Grünberg Institut - 5 and Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich, 52425 Jülich (Germany)
Publication Date:
OSTI Identifier:
22261778
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BISMUTH TELLURIDES; LAYERS; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; SUBSTRATES; THIN FILMS

Citation Formats

Borisova, Svetlana, Krumrain, Julian, Mussler, Gregor, Grützmacher, Detlev, and Luysberg, Martina. Nucleation and growth dynamics of MBE-grown topological insulator Bi{sub 2}Te{sub 3} films on Si (111). United States: N. p., 2013. Web. doi:10.1063/1.4848350.
Borisova, Svetlana, Krumrain, Julian, Mussler, Gregor, Grützmacher, Detlev, & Luysberg, Martina. Nucleation and growth dynamics of MBE-grown topological insulator Bi{sub 2}Te{sub 3} films on Si (111). United States. doi:10.1063/1.4848350.
Borisova, Svetlana, Krumrain, Julian, Mussler, Gregor, Grützmacher, Detlev, and Luysberg, Martina. Wed . "Nucleation and growth dynamics of MBE-grown topological insulator Bi{sub 2}Te{sub 3} films on Si (111)". United States. doi:10.1063/1.4848350.
@article{osti_22261778,
title = {Nucleation and growth dynamics of MBE-grown topological insulator Bi{sub 2}Te{sub 3} films on Si (111)},
author = {Borisova, Svetlana and Krumrain, Julian and Mussler, Gregor and Grützmacher, Detlev and Luysberg, Martina},
abstractNote = {Topological insulator Bi{sub 2}Te{sub 3} films have been grown by molecular beam epitaxy on Si (111) substrates. The structural properties of the ultra-thin films and their evolution in morphology during the growth have been investigated. The growth starts by a nucleation of separate islands and subsequently turns into a layer-by-layer growth mode. Despite this, the grown film is found to be single crystalline and fully relaxed from the first atomic layer.},
doi = {10.1063/1.4848350},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1566,
place = {United States},
year = {2013},
month = {12}
}