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Title: Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique

Abstract

Flat amorphous silicon - crystal silicon (a-Si/c-Si) heterostructure were prepared by ultra-high vacuum electron beam evaporation technique on p-Si (111) and n-Si (100) single crystal substrates. Structural analyses were investigated by XRD, Raman and FEG-SEM analysis. With these analyses we determined that at the least amorphous structure shows modification but amorphous structure just protected. The electrical and photovoltaic properties of flat a-Si/c-Si heterojunction devices were investigated with current-voltage characteristics under dark and illumination conditions. Electrical properties of flat a-Si/c-Si heterorojunction; such as barrier height Φ{sub B}, diode ideality factor η were determined from current-voltage characteristics in dark conditions. These a-Si/c-Si heterostructure have good rectification behavior as a diode and exhibit high photovoltaic sensitivity.

Authors:
 [1];  [2]; ;  [1]
  1. Department of Metallurgical and Materials Engineering, Istanbul Technical University, Ayazağa 34469, Istanbul (Turkey)
  2. Faculty of Arts and Sciences, Department of Physics, Namık Kemal University, Değirmenaltı, Tekirdağ (Turkey)
Publication Date:
OSTI Identifier:
22261687
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1569; Journal Issue: 1; Conference: 3. international advances in applied physics and materials science congress, Antalya (Turkey), 24-28 Apr 2013; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRIC POTENTIAL; ELECTRICAL PROPERTIES; ELECTRON BEAMS; MONOCRYSTALS; PHOTOVOLTAIC EFFECT; SCANNING ELECTRON MICROSCOPY; SILICON; SUBSTRATES; X-RAY DIFFRACTION

Citation Formats

Demiroğlu, D., Tatar, B., Kazmanli, K., and Urgen, M. Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique. United States: N. p., 2013. Web. doi:10.1063/1.4849249.
Demiroğlu, D., Tatar, B., Kazmanli, K., & Urgen, M. Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique. United States. doi:10.1063/1.4849249.
Demiroğlu, D., Tatar, B., Kazmanli, K., and Urgen, M. Mon . "Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique". United States. doi:10.1063/1.4849249.
@article{osti_22261687,
title = {Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique},
author = {Demiroğlu, D. and Tatar, B. and Kazmanli, K. and Urgen, M.},
abstractNote = {Flat amorphous silicon - crystal silicon (a-Si/c-Si) heterostructure were prepared by ultra-high vacuum electron beam evaporation technique on p-Si (111) and n-Si (100) single crystal substrates. Structural analyses were investigated by XRD, Raman and FEG-SEM analysis. With these analyses we determined that at the least amorphous structure shows modification but amorphous structure just protected. The electrical and photovoltaic properties of flat a-Si/c-Si heterojunction devices were investigated with current-voltage characteristics under dark and illumination conditions. Electrical properties of flat a-Si/c-Si heterorojunction; such as barrier height Φ{sub B}, diode ideality factor η were determined from current-voltage characteristics in dark conditions. These a-Si/c-Si heterostructure have good rectification behavior as a diode and exhibit high photovoltaic sensitivity.},
doi = {10.1063/1.4849249},
journal = {AIP Conference Proceedings},
number = 1,
volume = 1569,
place = {United States},
year = {Mon Dec 16 00:00:00 EST 2013},
month = {Mon Dec 16 00:00:00 EST 2013}
}