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Title: High mobility n-type organic thin-film transistors deposited at room temperature by supersonic molecular beam deposition

Abstract

In this paper, we report on the fabrication of N,N′-1H,1H-perfluorobutil dicyanoperylenediimide (PDIF-CN{sub 2}) organic thin-film transistors by Supersonic Molecular Beam Deposition. The devices exhibit mobility up to 0.2 cm{sup 2}/V s even if the substrate is kept at room temperature during the organic film growth, exceeding by three orders of magnitude the electrical performance of those grown at the same temperature by conventional Organic Molecular Beam Deposition. The possibility to get high-mobility n-type transistors avoiding thermal treatments during or after the deposition could significantly extend the number of substrates suitable to the fabrication of flexible high-performance complementary circuits by using this compound.

Authors:
; ; ;  [1]; ; ; ;  [2];  [3]
  1. CNR-SPIN and Physics Department, University of Naples, Piazzale Tecchio 80, I-80125 Naples (Italy)
  2. IMEM-CNR-FBK Division of Trento, Via alla Cascata 56/C, I-38123 Povo (Italy)
  3. IMEM-CNR, Parco Area delle Scienze 37/A, I-43124 Parma (Italy)
Publication Date:
OSTI Identifier:
22261585
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARBON NITRIDES; DEPOSITION; FABRICATION; MOLECULAR BEAMS; PERFORMANCE; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TRANSISTORS

Citation Formats

Chiarella, F., E-mail: fabio.chiarella@spin.cnr.it, Barra, M., Ciccullo, F., Cassinese, A., Toccoli, T., Aversa, L., Tatti, R., Verucchi, R., and Iannotta, S.. High mobility n-type organic thin-film transistors deposited at room temperature by supersonic molecular beam deposition. United States: N. p., 2014. Web. doi:10.1063/1.4870991.
Chiarella, F., E-mail: fabio.chiarella@spin.cnr.it, Barra, M., Ciccullo, F., Cassinese, A., Toccoli, T., Aversa, L., Tatti, R., Verucchi, R., & Iannotta, S.. High mobility n-type organic thin-film transistors deposited at room temperature by supersonic molecular beam deposition. United States. doi:10.1063/1.4870991.
Chiarella, F., E-mail: fabio.chiarella@spin.cnr.it, Barra, M., Ciccullo, F., Cassinese, A., Toccoli, T., Aversa, L., Tatti, R., Verucchi, R., and Iannotta, S.. 2014. "High mobility n-type organic thin-film transistors deposited at room temperature by supersonic molecular beam deposition". United States. doi:10.1063/1.4870991.
@article{osti_22261585,
title = {High mobility n-type organic thin-film transistors deposited at room temperature by supersonic molecular beam deposition},
author = {Chiarella, F., E-mail: fabio.chiarella@spin.cnr.it and Barra, M. and Ciccullo, F. and Cassinese, A. and Toccoli, T. and Aversa, L. and Tatti, R. and Verucchi, R. and Iannotta, S.},
abstractNote = {In this paper, we report on the fabrication of N,N′-1H,1H-perfluorobutil dicyanoperylenediimide (PDIF-CN{sub 2}) organic thin-film transistors by Supersonic Molecular Beam Deposition. The devices exhibit mobility up to 0.2 cm{sup 2}/V s even if the substrate is kept at room temperature during the organic film growth, exceeding by three orders of magnitude the electrical performance of those grown at the same temperature by conventional Organic Molecular Beam Deposition. The possibility to get high-mobility n-type transistors avoiding thermal treatments during or after the deposition could significantly extend the number of substrates suitable to the fabrication of flexible high-performance complementary circuits by using this compound.},
doi = {10.1063/1.4870991},
journal = {Applied Physics Letters},
number = 14,
volume = 104,
place = {United States},
year = 2014,
month = 4
}
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