Ferroelectric modulation on resonant tunneling through perovskite double-barriers

Journal Article · Mon Apr 07 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4871277· OSTI ID:22261569

Du, Ruifang; Qiu, Xiangbiao; Li, Aidong; Wu, Di ^[1]

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1. National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093 (China)

The negative differential resistance (NDR) due to resonance tunneling is achieved at room temperature in perovskite double-barrier heterostructures composed of a 10 unit-cell-thick SrTiO{sub 3} quantum well sandwiched in two 10 unit-cell-thick LaAlO{sub 3} barriers. The NDR occurs at 1.2 V and does not change with voltage cycling. When the paraelectric SrTiO{sub 3} quantum well is replaced by a ferroelectric BaTiO{sub 3}, the onset of the NDR can be modulated by polarization switching in the ultrathin BaTiO{sub 3}. A polarization pointing to the collector lowers the NDR voltage but a polarization pointing to the emitter increases it. The shift of the NDR voltage is ascribed to reversal of the extra electric field in the quantum well due to the polarization switching.

• OSTI ID: 22261569
• Journal Information: Applied Physics Letters, Vol. 104, Issue 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
FERROELECTRIC MATERIALS
LANTHANUM COMPOUNDS
PEROVSKITE
QUANTUM WELLS
STRONTIUM TITANATES
TEMPERATURE RANGE 0273-0400 K
TUNNEL EFFECT