Direct periodic patterning of GaN-based light-emitting diodes by three-beam interference laser ablation

Journal Article · Mon Apr 07 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4871089· OSTI ID:22261557

Kim, Jeomoh; Ji, Mi-Hee; Detchprohm, Theeradetch ^[1]; Yuan, Dajun; Guo, Rui ^[2]; Liu, Jianping ^[3]; Asadirad, Mojtaba ^[4]; Kwon, Min-Ki ^[5]; Dupuis, Russell D. ^[1]; Das, Suman ^[2]; Ryou, Jae-Hyun ^[4]

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1. Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Dr. NW, Atlanta, Georgia 30332-0250 (United States)
2. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0405 (United States)
3. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215125 (China)
4. Materials Engineering Program, University of Houston, Houston, Texas 77204-4005 (United States)
5. Department of Photonic Engineering, Chosun University, Seosuk-dong, Gwangju 501-759 (Korea, Republic of)

We report on the direct patterning of two-dimensional periodic structures in GaN-based light-emitting diodes (LEDs) through laser interference ablation for the fast and reliable fabrication of periodic micro- and nano-structures aimed at enhancing light output. Holes arranged in a two-dimensional hexagonal lattice array having an opening size of 500 nm, depth of 50 nm, and a periodicity of 1 μm were directly formed by three-beam laser interference without photolithography or electron-beam lithography processes. The laser-patterned LEDs exhibit an enhancement in light output power of 20% compared to conventional LEDs having a flat top surface without degradation of electrical and optical properties of the top p-GaN layer and the active region, respectively.

• OSTI ID: 22261557
• Journal Information: Applied Physics Letters, Vol. 104, Issue 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRON BEAMS
GALLIUM NITRIDES
HEXAGONAL LATTICES
LASERS
LIGHT EMITTING DIODES
NANOSTRUCTURES
OPTICAL PROPERTIES
PERIODICITY