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Title: Effects of magnetic flux density and substrate bias voltage on Ni films prepared on a flexible substrate material using unbalanced magnetron sputtering assisted by inductively coupled plasma

Abstract

The authors fabricated Ni films on a flexible substrate material using unbalanced magnetron sputtering assisted by inductively coupled plasma. The effects of magnetic flux density B{sub C} and substrate DC bias voltage V{sub S} on the Ni film structures were investigated. For V{sub S} = −40 V, the average surface grain size D{sub G} measured by atomic force microscopy for B{sub C} = 0, 3, and 5 mT was 88.2, 95.4, and 104.4 nm, respectively. In addition, D{sub G} increased with V{sub S}. From x-ray diffraction measurements, the (111) and (200) peaks were clearly visible for the fabricated Ni films. The ratio of the integrated intensities of I(111)/I(200) increased with V{sub S}. For V{sub S} = −40 V and B{sub C} = 3 mT, a film resistivity ρ of 8.96 × 10{sup −6} Ω cm was observed, which is close to the Ni bulk value of 6.84 × 10{sup −6} Ω cm. From these results, the authors determined that the structure of the fabricated Ni films on the flexible substrate material was affected by the values of B{sub C} and V{sub S}.

Authors:
 [1];  [2]
  1. Graduate School of Science and Technology, Hiroshima Institute of Technology, 2-1-1, Miyake, Saeki-ku, Hiroshima 7315193 (Japan)
  2. Department of Electronics and Computer Engineering, Hiroshima Institute of Technology, 2-1-1, Miyake, Saeki-ku, Hiroshima 7315193 (Japan)
Publication Date:
OSTI Identifier:
22258762
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 32; Journal Issue: 2; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMIC FORCE MICROSCOPY; ELECTRIC POTENTIAL; FILMS; FLUX DENSITY; GRAIN SIZE; IODINE 111; MAGNETIC FLUX; MAGNETRONS; NICKEL; PLASMA; SPUTTERING; SUBSTRATES; X-RAY DIFFRACTION

Citation Formats

Koda, Tatsunori, and Toyota, Hiroshi, E-mail: h.toyota.za@it-hiroshima.ac.jp. Effects of magnetic flux density and substrate bias voltage on Ni films prepared on a flexible substrate material using unbalanced magnetron sputtering assisted by inductively coupled plasma. United States: N. p., 2014. Web. doi:10.1116/1.4832226.
Koda, Tatsunori, & Toyota, Hiroshi, E-mail: h.toyota.za@it-hiroshima.ac.jp. Effects of magnetic flux density and substrate bias voltage on Ni films prepared on a flexible substrate material using unbalanced magnetron sputtering assisted by inductively coupled plasma. United States. doi:10.1116/1.4832226.
Koda, Tatsunori, and Toyota, Hiroshi, E-mail: h.toyota.za@it-hiroshima.ac.jp. Sat . "Effects of magnetic flux density and substrate bias voltage on Ni films prepared on a flexible substrate material using unbalanced magnetron sputtering assisted by inductively coupled plasma". United States. doi:10.1116/1.4832226.
@article{osti_22258762,
title = {Effects of magnetic flux density and substrate bias voltage on Ni films prepared on a flexible substrate material using unbalanced magnetron sputtering assisted by inductively coupled plasma},
author = {Koda, Tatsunori and Toyota, Hiroshi, E-mail: h.toyota.za@it-hiroshima.ac.jp},
abstractNote = {The authors fabricated Ni films on a flexible substrate material using unbalanced magnetron sputtering assisted by inductively coupled plasma. The effects of magnetic flux density B{sub C} and substrate DC bias voltage V{sub S} on the Ni film structures were investigated. For V{sub S} = −40 V, the average surface grain size D{sub G} measured by atomic force microscopy for B{sub C} = 0, 3, and 5 mT was 88.2, 95.4, and 104.4 nm, respectively. In addition, D{sub G} increased with V{sub S}. From x-ray diffraction measurements, the (111) and (200) peaks were clearly visible for the fabricated Ni films. The ratio of the integrated intensities of I(111)/I(200) increased with V{sub S}. For V{sub S} = −40 V and B{sub C} = 3 mT, a film resistivity ρ of 8.96 × 10{sup −6} Ω cm was observed, which is close to the Ni bulk value of 6.84 × 10{sup −6} Ω cm. From these results, the authors determined that the structure of the fabricated Ni films on the flexible substrate material was affected by the values of B{sub C} and V{sub S}.},
doi = {10.1116/1.4832226},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
number = 2,
volume = 32,
place = {United States},
year = {Sat Mar 15 00:00:00 EDT 2014},
month = {Sat Mar 15 00:00:00 EDT 2014}
}