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Title: Negative differential resistance and effect of defects and deformations in MoS{sub 2} armchair nanoribbon metal-oxide-semiconductor field effect transistor

Abstract

In this work, we present a study on the negative differential resistance (NDR) behavior and the impact of various deformations (like ripple, twist, wrap) and defects like vacancies and edge roughness on the electronic properties of short-channel MoS{sub 2} armchair nanoribbon MOSFETs. The effect of deformation (3°–7° twist or wrap and 0.3–0.7 Å ripple amplitude) and defects on a 10 nm MoS2 ANR FET is evaluated by the density functional tight binding theory and the non-equilibrium Green's function approach. We study the channel density of states, transmission spectra, and the I{sub D}–V{sub D} characteristics of such devices under the varying conditions, with focus on the NDR behavior. Our results show significant change in the NDR peak to valley ratio and the NDR window with such minor intrinsic deformations, especially with the ripple.

Authors:
;  [1]
  1. Nano-Scale Device Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore 560 012 (India)
Publication Date:
OSTI Identifier:
22258755
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 114; Journal Issue: 19; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AMPLITUDES; DEFORMATION; DENSITY FUNCTIONAL METHOD; METALS; MOLYBDENUM SULFIDES; MOSFET; NANOSTRUCTURES; OXIDES; ROUGHNESS; SEMICONDUCTOR MATERIALS; VACANCIES

Citation Formats

Sengupta, Amretashis, and Mahapatra, Santanu. Negative differential resistance and effect of defects and deformations in MoS{sub 2} armchair nanoribbon metal-oxide-semiconductor field effect transistor. United States: N. p., 2013. Web. doi:10.1063/1.4833554.
Sengupta, Amretashis, & Mahapatra, Santanu. Negative differential resistance and effect of defects and deformations in MoS{sub 2} armchair nanoribbon metal-oxide-semiconductor field effect transistor. United States. doi:10.1063/1.4833554.
Sengupta, Amretashis, and Mahapatra, Santanu. Thu . "Negative differential resistance and effect of defects and deformations in MoS{sub 2} armchair nanoribbon metal-oxide-semiconductor field effect transistor". United States. doi:10.1063/1.4833554.
@article{osti_22258755,
title = {Negative differential resistance and effect of defects and deformations in MoS{sub 2} armchair nanoribbon metal-oxide-semiconductor field effect transistor},
author = {Sengupta, Amretashis and Mahapatra, Santanu},
abstractNote = {In this work, we present a study on the negative differential resistance (NDR) behavior and the impact of various deformations (like ripple, twist, wrap) and defects like vacancies and edge roughness on the electronic properties of short-channel MoS{sub 2} armchair nanoribbon MOSFETs. The effect of deformation (3°–7° twist or wrap and 0.3–0.7 Å ripple amplitude) and defects on a 10 nm MoS2 ANR FET is evaluated by the density functional tight binding theory and the non-equilibrium Green's function approach. We study the channel density of states, transmission spectra, and the I{sub D}–V{sub D} characteristics of such devices under the varying conditions, with focus on the NDR behavior. Our results show significant change in the NDR peak to valley ratio and the NDR window with such minor intrinsic deformations, especially with the ripple.},
doi = {10.1063/1.4833554},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 19,
volume = 114,
place = {United States},
year = {2013},
month = {11}
}