Electrical properties of TiN on gallium nitride grown using different deposition conditions and annealing

Journal Article · Sat Mar 15 00:00:00 EDT 2014 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.4862084· OSTI ID:22258651

Li, Liuan; Kishi, Akinori; Shiraishi, Takayuki; Jiang, Ying; Wang, Qingpeng; Ao, Jin-Ping ^[1]

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1. Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506 (Japan)

This study evaluates the thermal stability of different refractory metal nitrides used as Schottky electrodes on GaN. The results demonstrate that TiN, MoSiN, and MoN possess good rectification and adhesion strength, with barrier heights of 0.56, 0.54, and 0.36 eV, respectively. After thermal treatment at 850 °C for 1 min, the TiN and MoN electrodes still exhibit rectifying characteristics, while the MoSiN degrades to an ohmic-like contact. For further study, several TiN films are deposited using different N{sub 2}/Ar reactive/inert sputtering gas ratios, thereby varying the nitrogen content present in the sputtering gas. Ohmic-like contact is observed with the pure Ti contact film, and Schottky characteristics are observed with the samples possessing nitrogen in the film. The average Schottky barrier height is about 0.5 eV and remains virtually constant with varying nitrogen deposition content. After examining Raman spectra and x-ray photoelectron spectroscopy results, the increase in the film resistivity after thermal treatment is attributed to oxidation and/or nitridation. Films deposited with a medium (40% and 60%) nitrogen content show the best film quality and thermal stability.

• OSTI ID: 22258651
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 32, Issue 2; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ADHESION
ANNEALING
DEPOSITION
ELECTRICAL PROPERTIES
ELECTRODES
FILMS
GALLIUM NITRIDES
MOLYBDENUM NITRIDES
NITRIDATION
NITROGEN
OXIDATION
RAMAN SPECTRA
REFRACTORY METALS
SCHOTTKY BARRIER DIODES
SPUTTERING
TITANIUM NITRIDES
X-RAY PHOTOELECTRON SPECTROSCOPY