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Title: Thermodynamic and kinetic control of the lateral Si wire growth

Abstract

Reproducible lateral Si wire growth has been realized on the Si (100) surface. In this paper, we present experimental evidence showing the unique role that carbon plays in initiating lateral growth of Si wires on a Si (100) substrate. Once initiated in the presence of ≈5 ML of C, lateral growth can be achieved in the range of temperatures, T = 450–650 °C, and further controlled by the interplay of the flux of incoming Si atoms with the size and areal density of Au droplets. Critical thermodynamic and kinetic aspects of the growth are discussed in detail.

Authors:
;  [1]
  1. Department of Physics and Astronomy, The University of Western Ontario, 1151 Richmond St., London, Ontario N6A 3K7 (Canada)
Publication Date:
OSTI Identifier:
22258610
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARBON; CRYSTAL GROWTH; SUBSTRATES; THERMODYNAMIC PROPERTIES; WIRES

Citation Formats

Dedyulin, Sergey N., E-mail: sdedyuli@uwo.ca, and Goncharova, Lyudmila V. Thermodynamic and kinetic control of the lateral Si wire growth. United States: N. p., 2014. Web. doi:10.1063/1.4869444.
Dedyulin, Sergey N., E-mail: sdedyuli@uwo.ca, & Goncharova, Lyudmila V. Thermodynamic and kinetic control of the lateral Si wire growth. United States. doi:10.1063/1.4869444.
Dedyulin, Sergey N., E-mail: sdedyuli@uwo.ca, and Goncharova, Lyudmila V. Mon . "Thermodynamic and kinetic control of the lateral Si wire growth". United States. doi:10.1063/1.4869444.
@article{osti_22258610,
title = {Thermodynamic and kinetic control of the lateral Si wire growth},
author = {Dedyulin, Sergey N., E-mail: sdedyuli@uwo.ca and Goncharova, Lyudmila V.},
abstractNote = {Reproducible lateral Si wire growth has been realized on the Si (100) surface. In this paper, we present experimental evidence showing the unique role that carbon plays in initiating lateral growth of Si wires on a Si (100) substrate. Once initiated in the presence of ≈5 ML of C, lateral growth can be achieved in the range of temperatures, T = 450–650 °C, and further controlled by the interplay of the flux of incoming Si atoms with the size and areal density of Au droplets. Critical thermodynamic and kinetic aspects of the growth are discussed in detail.},
doi = {10.1063/1.4869444},
journal = {Applied Physics Letters},
number = 12,
volume = 104,
place = {United States},
year = {Mon Mar 24 00:00:00 EDT 2014},
month = {Mon Mar 24 00:00:00 EDT 2014}
}
  • No abstract prepared.
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