Photonic crystal light emitting diode based on Er and Si nanoclusters co-doped slot waveguide
- Dipartimento di Fisica, Università di Pavia, Via Bassi 6, 27100 Pavia (Italy)
- MATIS-IMM CNR and Dipartimento di Fisica e Astronomia, Università di Catania, via S. Sofia 64, 95123 Catania (Italy)
- CNR-IPCF, Viale Ferdinando Stagno d'Alcontres 37, 98158 Messina (Italy)
- ST Microelectronics, Stradale Primosole 50, 95121 Catania (Italy)
We report on the design, fabrication, and electro-optical characterization of a light emitting device operating at 1.54 μm, whose active layer consists of silicon oxide containing Er-doped Si nanoclusters. A photonic crystal (PhC) is fabricated on the top-electrode to enhance the light extraction in the vertical direction, and thus the external efficiency of the device. This occurs if a photonic mode of the PhC slab is resonant with the Er emission energy, as confirmed by theoretical calculations and experimental analyses. We measure an increase of the extraction efficiency by a factor of 3 with a high directionality of light emission in a narrow vertical cone. External quantum efficiency and power efficiency are among the highest reported for this kind of material. These results are important for the realization of CMOS-compatible efficient light emitters at telecom wavelengths.
- OSTI ID:
- 22258605
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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