skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Atomic configuration of irradiation-induced planar defects in 3C-SiC

Abstract

The atomic configuration of irradiation-induced planar defects in single crystal 3C-SiC at high irradiation temperatures was shown in this research. A spherical aberration corrected scanning transmission electron microscope provided images of individual silicon and carbon atoms by the annular bright-field (ABF) method. Two types of irradiation-induced planar defects were observed in the ABF images including the extrinsic stacking fault loop with two offset Si-C bilayers and the intrinsic stacking fault loop with one offset Si-C bilayer. The results are in good agreement with images simulated under identical conditions.

Authors:
 [1];  [2];  [3]; ; ;  [4];  [1];  [1];  [2]
  1. Department of Engineering and System Science, National Tsing-Hua University, Hsinchu 30013, Taiwan (China)
  2. (China)
  3. Institute of Nuclear Engineering and Science, National Tsing-Hua University, Hsinchu 30013, Taiwan (China)
  4. Material and Chemical Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan (China)
Publication Date:
OSTI Identifier:
22258596
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARBON; IRRADIATION; MONOCRYSTALS; SILICON CARBIDES; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Lin, Y. R., National Synchrotron Radiation Center, 101 Hsin-Ann Road, Hsinchu Science Park, Hsinchu 30076, Taiwan, Ho, C. Y., Hsieh, C. Y., Chang, M. T., Lo, S. C., Chen, F. R., Kai, J. J., E-mail: ceer0001@gmail.com, and Institute of Nuclear Engineering and Science, National Tsing-Hua University, Hsinchu 30013, Taiwan. Atomic configuration of irradiation-induced planar defects in 3C-SiC. United States: N. p., 2014. Web. doi:10.1063/1.4869829.
Lin, Y. R., National Synchrotron Radiation Center, 101 Hsin-Ann Road, Hsinchu Science Park, Hsinchu 30076, Taiwan, Ho, C. Y., Hsieh, C. Y., Chang, M. T., Lo, S. C., Chen, F. R., Kai, J. J., E-mail: ceer0001@gmail.com, & Institute of Nuclear Engineering and Science, National Tsing-Hua University, Hsinchu 30013, Taiwan. Atomic configuration of irradiation-induced planar defects in 3C-SiC. United States. doi:10.1063/1.4869829.
Lin, Y. R., National Synchrotron Radiation Center, 101 Hsin-Ann Road, Hsinchu Science Park, Hsinchu 30076, Taiwan, Ho, C. Y., Hsieh, C. Y., Chang, M. T., Lo, S. C., Chen, F. R., Kai, J. J., E-mail: ceer0001@gmail.com, and Institute of Nuclear Engineering and Science, National Tsing-Hua University, Hsinchu 30013, Taiwan. Mon . "Atomic configuration of irradiation-induced planar defects in 3C-SiC". United States. doi:10.1063/1.4869829.
@article{osti_22258596,
title = {Atomic configuration of irradiation-induced planar defects in 3C-SiC},
author = {Lin, Y. R. and National Synchrotron Radiation Center, 101 Hsin-Ann Road, Hsinchu Science Park, Hsinchu 30076, Taiwan and Ho, C. Y. and Hsieh, C. Y. and Chang, M. T. and Lo, S. C. and Chen, F. R. and Kai, J. J., E-mail: ceer0001@gmail.com and Institute of Nuclear Engineering and Science, National Tsing-Hua University, Hsinchu 30013, Taiwan},
abstractNote = {The atomic configuration of irradiation-induced planar defects in single crystal 3C-SiC at high irradiation temperatures was shown in this research. A spherical aberration corrected scanning transmission electron microscope provided images of individual silicon and carbon atoms by the annular bright-field (ABF) method. Two types of irradiation-induced planar defects were observed in the ABF images including the extrinsic stacking fault loop with two offset Si-C bilayers and the intrinsic stacking fault loop with one offset Si-C bilayer. The results are in good agreement with images simulated under identical conditions.},
doi = {10.1063/1.4869829},
journal = {Applied Physics Letters},
number = 12,
volume = 104,
place = {United States},
year = {Mon Mar 24 00:00:00 EDT 2014},
month = {Mon Mar 24 00:00:00 EDT 2014}
}
  • We have recently found that the radiation tolerance of SiC is highly enhanced by introducing nanolayers of stacking faults and twins [Y. Zhang et al., Phys. Chem. Chem. Phys. 14, 13429 (2012)]. To reveal the origin of this radiation resistance, we used in situ transmission electron microscopy to examine structural changes induced by electron beam irradiation in 3C-SiC containing nanolayers of (111) planar defects. We found that preferential amorphization, when it does occur, takes place at grain boundaries and at 111 and 111 planar defects. Radiationinduced point defects, such as interstitials and vacancies, migrate two-dimensionally between the (111) planar defects,more » which probably enhances the damage recovery.« less
  • We have recently found that the radiation tolerance of SiC is highly enhanced by introducing nanolayers of stacking faults and twins [Y. Zhang et al., Phys. Chem. Chem. Phys. 14, 13429 (2012)]. To reveal the origin of this radiation resistance, we used in situ transmission electron microscopy to examine structural changes induced by electron beam irradiation in 3C-SiC containing nanolayers of (111) planar defects. We found that preferential amorphization, when it does occur, takes place at grain boundaries and at 111 and 111 planar defects. Radiationinduced point defects, such as interstitials and vacancies, migrate two-dimensionally between the (111) planar defects,more » which probably enhances the damage recovery.« less
  • We have recently found that the radiation tolerance of SiC is highly enhanced by introducing nanolayers of stacking faults and twins [Y. Zhang et al., Phys. Chem. Chem. Phys. 14, 13429 (2012)]. To reveal the origin of this radiation resistance, we used in situ transmission electron microscopy to examine structural changes induced by electron beam irradiation in 3C-SiC containing nanolayers of (111) planar defects. We found that preferential amorphization, when it does occur, takes place at grain boundaries and at (111) and (111) planar defects. Radiation-induced point defects, such as interstitials and vacancies, migrate two-dimensionally between the (111) planar defects,more » which probably enhances the damage recovery.« less
  • Low temperature annealing of electron irradiation-induced deep levels in 4H-SiC is reported. The major deep level transient spectroscopy peak S2 associated with the energy level at E{sub c}-0.39 eV disappears in the temperature range 360-400 K, and some rearrangement of the peak S3, associated with the defect Z{sub 1}/Z{sub 2} with energy level at E{sub c}-0.5/E{sub c}-0.65 eV occurs in the temperature interval 400-470 K. A net free charge carrier concentration increase goes along with the disappearance of peak S2 at E{sub c}-0.39 eV, whereas the charge collection efficiency of the diode does not experience any significant change. An interpretationmore » of the annealing of peak S2 on a microscopic scale is given.« less
  • Nitrogen doped 4H-SiC epitaxial layers were investigated by deep level transient spectroscopy after irradiation with 6 MeV electrons. The influence of C/Si ratio, N doping level, and growth rate on the behavior of the prominent Z{sub 1,2} and EH{sub 6,7} levels during irradiation and subsequent annealing was studied. Both Z{sub 1,2} and EH{sub 6,7} increase in concentration with the N doping as well as with the C/Si ratio. It is demonstrated that the growth conditions play a decisive role for the annihilation of the EH{sub 6,7} level and a possible identity of the EH{sub 6,7} defect is discussed.