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Title: Visible-light electroluminescence in Mn-doped GaAs light-emitting diodes

Abstract

We observed visible-light electroluminescence (EL) due to d-d transitions in light-emitting diodes with Mn-doped GaAs layers (here, referred to as GaAs:Mn). Besides the band-gap emission of GaAs, the EL spectra show two peaks at 1.89 eV and 2.16 eV, which are exactly the same as {sup 4}A{sub 2}({sup 4}F) → {sup 4}T{sub 1}({sup 4}G) and {sup 4}T{sub 1}({sup 4}G) → {sup 6}A{sub 1}({sup 6}S) transitions of Mn atoms doped in ZnS. The temperature dependence and the current-density dependence are consistent with the characteristics of d-d transitions. We explain the observed EL spectra by the p-d hybridized orbitals of the Mn d electrons in GaAs.

Authors:
; ;  [1]
  1. Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)
Publication Date:
OSTI Identifier:
22258587
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 104; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DOPED MATERIALS; ELECTROLUMINESCENCE; GALLIUM ARSENIDES; LIGHT EMITTING DIODES; TEMPERATURE DEPENDENCE; ZINC SULFIDES

Citation Formats

Nam Hai, Pham, Maruo, Daiki, and Tanaka, Masaaki. Visible-light electroluminescence in Mn-doped GaAs light-emitting diodes. United States: N. p., 2014. Web. doi:10.1063/1.4869576.
Nam Hai, Pham, Maruo, Daiki, & Tanaka, Masaaki. Visible-light electroluminescence in Mn-doped GaAs light-emitting diodes. United States. https://doi.org/10.1063/1.4869576
Nam Hai, Pham, Maruo, Daiki, and Tanaka, Masaaki. 2014. "Visible-light electroluminescence in Mn-doped GaAs light-emitting diodes". United States. https://doi.org/10.1063/1.4869576.
@article{osti_22258587,
title = {Visible-light electroluminescence in Mn-doped GaAs light-emitting diodes},
author = {Nam Hai, Pham and Maruo, Daiki and Tanaka, Masaaki},
abstractNote = {We observed visible-light electroluminescence (EL) due to d-d transitions in light-emitting diodes with Mn-doped GaAs layers (here, referred to as GaAs:Mn). Besides the band-gap emission of GaAs, the EL spectra show two peaks at 1.89 eV and 2.16 eV, which are exactly the same as {sup 4}A{sub 2}({sup 4}F) → {sup 4}T{sub 1}({sup 4}G) and {sup 4}T{sub 1}({sup 4}G) → {sup 6}A{sub 1}({sup 6}S) transitions of Mn atoms doped in ZnS. The temperature dependence and the current-density dependence are consistent with the characteristics of d-d transitions. We explain the observed EL spectra by the p-d hybridized orbitals of the Mn d electrons in GaAs.},
doi = {10.1063/1.4869576},
url = {https://www.osti.gov/biblio/22258587}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 12,
volume = 104,
place = {United States},
year = {Mon Mar 24 00:00:00 EDT 2014},
month = {Mon Mar 24 00:00:00 EDT 2014}
}