Plasma-enhanced atomic layer deposition of silicon dioxide films using plasma-activated triisopropylsilane as a precursor

Jeon, Ki-Moon; Shin, Jae-Su; Yun, Ju-Young; Jun Lee, Sang; Kang, Sang-Woo

doi:10.1116/1.4871455

Title: Plasma-enhanced atomic layer deposition of silicon dioxide films using plasma-activated triisopropylsilane as a precursor

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Abstract

The plasma-enhanced atomic layer deposition (PEALD) process was developed as a growth technique of SiO{sub 2} thin films using a plasma-activated triisopropylsilane [TIPS, ((iPr){sub 3}SiH)] precursor. TIPS was activated by an argon plasma at the precursor injection stage of the process. Using the activated TIPS, it was possible to control the growth rate per cycle of the deposited films by adjusting the plasma ignition time. The PEALD technique allowed deposition of SiO{sub 2} films at temperatures as low as 50 °C without carbon impurities. In addition, films obtained with plasma ignition times of 3 s and 10 s had similar values of root-mean-square surface roughness. In order to evaluate the suitability of TIPS as a precursor for low-temperature deposition of SiO{sub 2} films, the vapor pressure of TIPS was measured. The thermal stability and the reactivity of the gas-phase TIPS with respect to water vapor were also investigated by analyzing the intensity changes of the C–H and Si–H peaks in the Fourier-transform infrared spectrum of TIPS.

Authors:

Jeon, Ki-Moon ^[1]; Shin, Jae-Su ^[2]; Yun, Ju-Young ^[3]; Jun Lee, Sang ^[4]; Kang, Sang-Woo ^[5]

Vacuum Center, Division of Industrial Metrology, Korea Research Institute of Standards and Science (KRISS), Daejeon 305-340, South Korea and Department of Advanced Materials Engineering, Dae Jeon University, Daejeon 300-716 (Korea, Republic of)
Department of Advanced Materials Engineering, Dae Jeon University, Daejeon 300-716 (Korea, Republic of)
Vacuum Center, Division of Industrial Metrology, Korea Research Institute of Standards and Science (KRISS), Daejeon 305-340, South Korea and Department of Nano and Bio Surface Science, University of Science and Technology (UST), Daejeon 305-333 (Korea, Republic of)
Center of Nanomaterials Characterization, Division of Industrial Metrology, Korea Research Institute of Standards and Science (KRISS), Daejeon 305-340, South Korea and Department of Nano Science, University of Science and Technology (UST), Daejeon 305-333 (Korea, Republic of)
Vacuum Center, Division of Industrial Metrology, Korea Research Institute of Standards and Science (KRISS), Daejeon 305-340, South Korea and Department of Advanced Device Technology, University of Science and Technology (UST), Daejeon 305-333 (Korea, Republic of)

Publication Date:: Thu May 15 00:00:00 EDT 2014

OSTI Identifier:: 22258566

Resource Type:: Journal Article

Journal Name:: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

Additional Journal Information:: Journal Volume: 32; Journal Issue: 3; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0734-2101

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ARGON; CARBON; DEPOSITION; FOURIER TRANSFORMATION; INFRARED SPECTRA; PLASMA; PRECURSOR; ROUGHNESS; SILANES; SILICA; SILICON OXIDES; SURFACES; TEMPERATURE RANGE 0065-0273 K; THIN FILMS; VAPOR PRESSURE; WATER VAPOR

Citation Formats


                    Jeon, Ki-Moon, Shin, Jae-Su, Yun, Ju-Young, Jun Lee, Sang, and Kang, Sang-Woo. Plasma-enhanced atomic layer deposition of silicon dioxide films using plasma-activated triisopropylsilane as a precursor.  United States: N. p., 2014. 
        Web.  doi:10.1116/1.4871455.

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                    Jeon, Ki-Moon, Shin, Jae-Su, Yun, Ju-Young, Jun Lee, Sang, & Kang, Sang-Woo. Plasma-enhanced atomic layer deposition of silicon dioxide films using plasma-activated triisopropylsilane as a precursor.  United States.  https://doi.org/10.1116/1.4871455

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                    Jeon, Ki-Moon, Shin, Jae-Su, Yun, Ju-Young, Jun Lee, Sang, and Kang, Sang-Woo. 2014.  
        "Plasma-enhanced atomic layer deposition of silicon dioxide films using plasma-activated triisopropylsilane as a precursor".  United States.  https://doi.org/10.1116/1.4871455.

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@article{osti_22258566,

  title        = {Plasma-enhanced atomic layer deposition of silicon dioxide films using plasma-activated triisopropylsilane as a precursor},

  author       = {Jeon, Ki-Moon and Shin, Jae-Su and Yun, Ju-Young and Jun Lee, Sang and Kang, Sang-Woo},

  abstractNote = {The plasma-enhanced atomic layer deposition (PEALD) process was developed as a growth technique of SiO{sub 2} thin films using a plasma-activated triisopropylsilane [TIPS, ((iPr){sub 3}SiH)] precursor. TIPS was activated by an argon plasma at the precursor injection stage of the process. Using the activated TIPS, it was possible to control the growth rate per cycle of the deposited films by adjusting the plasma ignition time. The PEALD technique allowed deposition of SiO{sub 2} films at temperatures as low as 50 °C without carbon impurities. In addition, films obtained with plasma ignition times of 3 s and 10 s had similar values of root-mean-square surface roughness. In order to evaluate the suitability of TIPS as a precursor for low-temperature deposition of SiO{sub 2} films, the vapor pressure of TIPS was measured. The thermal stability and the reactivity of the gas-phase TIPS with respect to water vapor were also investigated by analyzing the intensity changes of the C–H and Si–H peaks in the Fourier-transform infrared spectrum of TIPS.},

  doi          = {10.1116/1.4871455},

  url          = {https://www.osti.gov/biblio/22258566},
  journal      = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},

  issn         = {0734-2101},

  number       = 3,

  volume       = 32,

  place        = {United States},

  year         = {Thu May 15 00:00:00 EDT 2014},

  month        = {Thu May 15 00:00:00 EDT 2014}

}

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