Topography, complex refractive index, and conductivity of graphene layers measured by correlation of optical interference contrast, atomic force, and back scattered electron microscopy

Journal Article · Thu Nov 14 00:00:00 EST 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4831937· OSTI ID:22257764

Vaupel, Matthias; Dutschke, Anke ^[1]; Wurstbauer, Ulrich; Pasupathy, Abhay ^[2]; Hitzel, Frank ^[3]

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1. Training Application Support Center, Carl Zeiss Microscopy GmbH, Königsallee 9-21, 37081 Göttingen (Germany)
2. Department of Physics, Columbia University New York, 538 West 120th Street, New York, New York 10027 (United States)
3. DME Nanotechnologie GmbH, Geysostr. 13, D-38106 Braunschweig (Germany)

The optical phase shift by reflection on graphene is measured by interference contrast microscopy. The height profile across graphene layers on 300 nm thick SiO{sub 2} on silicon is derived from the phase profile. The complex refractive index and conductivity of graphene layers on silicon with 2 nm thin SiO{sub 2} are evaluated from a phase profile, while the height profile of the layers is measured by atomic force microscopy. It is observed that the conductivity measured on thin SiO{sub 2} is significantly greater than on thick SiO{sub 2}. Back scattered electron contrast of graphene layers is correlated to the height of graphene layers.

• OSTI ID: 22257764
• Journal Information: Journal of Applied Physics, Vol. 114, Issue 18; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ATOMIC FORCE MICROSCOPY
ELECTRON MICROSCOPY
GRAPHENE
LAYERS
PHASE SHIFT
REFLECTION
REFRACTIVE INDEX
SILICA
SILICON
SILICON OXIDES
TOPOGRAPHY