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Title: Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires

Abstract

We perform correlated studies of individual GaN nanowires in scanning electron microscopy combined to low temperature cathodoluminescence, microphotoluminescence, and scanning transmission electron microscopy. We show that some nanowires exhibit well localized regions emitting light at the energy of a stacking fault bound exciton (3.42 eV) and are able to observe the presence of a single stacking fault in these regions. Precise measurements of the cathodoluminescence signal in the vicinity of the stacking fault give access to the exciton diffusion length near this location.

Authors:
;  [1]; ; ;  [2]
  1. Inst. NEEL, Univ. Grenoble Alpes, F-38042 Grenoble (France)
  2. INAC, CEA, F-38054 Grenoble (France)
Publication Date:
OSTI Identifier:
22257746
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 104; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CATHODOLUMINESCENCE; DIFFUSION LENGTH; EXCITONS; GALLIUM NITRIDES; PHOTOLUMINESCENCE; QUANTUM WIRES; SCANNING ELECTRON MICROSCOPY; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY; WIRES

Citation Formats

Nogues, Gilles, Den Hertog, Martien, Inst. NEEL, CNRS, F-38042 Grenoble, Auzelle, Thomas, Gayral, Bruno, and Daudin, Bruno. Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires. United States: N. p., 2014. Web. doi:10.1063/1.4868131.
Nogues, Gilles, Den Hertog, Martien, Inst. NEEL, CNRS, F-38042 Grenoble, Auzelle, Thomas, Gayral, Bruno, & Daudin, Bruno. Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires. United States. https://doi.org/10.1063/1.4868131
Nogues, Gilles, Den Hertog, Martien, Inst. NEEL, CNRS, F-38042 Grenoble, Auzelle, Thomas, Gayral, Bruno, and Daudin, Bruno. 2014. "Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires". United States. https://doi.org/10.1063/1.4868131.
@article{osti_22257746,
title = {Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires},
author = {Nogues, Gilles and Den Hertog, Martien and Inst. NEEL, CNRS, F-38042 Grenoble and Auzelle, Thomas and Gayral, Bruno and Daudin, Bruno},
abstractNote = {We perform correlated studies of individual GaN nanowires in scanning electron microscopy combined to low temperature cathodoluminescence, microphotoluminescence, and scanning transmission electron microscopy. We show that some nanowires exhibit well localized regions emitting light at the energy of a stacking fault bound exciton (3.42 eV) and are able to observe the presence of a single stacking fault in these regions. Precise measurements of the cathodoluminescence signal in the vicinity of the stacking fault give access to the exciton diffusion length near this location.},
doi = {10.1063/1.4868131},
url = {https://www.osti.gov/biblio/22257746}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 10,
volume = 104,
place = {United States},
year = {Mon Mar 10 00:00:00 EDT 2014},
month = {Mon Mar 10 00:00:00 EDT 2014}
}