Silicon heterojunction solar cell with passivated hole selective MoO{sub x} contact

Journal Article · Mon Mar 17 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4868880· OSTI ID:22257742

Battaglia, Corsin; Yin, Xingtian; Zheng, Maxwell; Javey, Ali ^[1]; Martín de Nicolás, Silvia; De Wolf, Stefaan; Ballif, Christophe ^[2]

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1. Electrical Engineering and Computer Sciences Department, University of California, Berkeley, California 94720 (United States)
2. Photovoltaics and Thin Film Electronics Laboratory, Ecole Polytechnique Fédérale de Lausanne, 2000 Neuchâtel (Switzerland)

We explore substoichiometric molybdenum trioxide (MoO{sub x}, x < 3) as a dopant-free, hole-selective contact for silicon solar cells. Using an intrinsic hydrogenated amorphous silicon passivation layer between the oxide and the silicon absorber, we demonstrate a high open-circuit voltage of 711 mV and power conversion efficiency of 18.8%. Due to the wide band gap of MoO{sub x}, we observe a substantial gain in photocurrent of 1.9 mA/cm{sup 2} in the ultraviolet and visible part of the solar spectrum, when compared to a p-type amorphous silicon emitter of a traditional silicon heterojunction cell. Our results emphasize the strong potential for oxides as carrier selective heterojunction partners to inorganic semiconductors.

• OSTI ID: 22257742
• Journal Information: Applied Physics Letters, Vol. 104, Issue 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
HETEROJUNCTIONS
MOLYBDENUM OXIDES
SEMICONDUCTOR MATERIALS
SILICON
SILICON SOLAR CELLS
SUBSTOICHIOMETRY
ULTRAVIOLET RADIATION