Induced spin-polarization of EuS at room temperature in Ni/EuS multilayers
- Institut für Experimentalphysik, Freie Universität Berlin, Arnimallee 14, D-14195 Berlin-Dahlem (Germany)
- Department of Physics and Astronomy, Uppsala University, Box 516, SE-751 20 Uppsala (Sweden)
- Chemical Process and Energy Resources Institute (CPERI), Centre for Research and Technology Hellas (CERTH), 57001 Thermi, Thessaloniki (Greece)
- European Synchrotron Radiation Facility (ESRF), B.P.220, 38043 Grenoble (France)
- Laboratory of High-Tech Materials, School of Engineering, University of Patras, 26504 Patras (Greece)
Ni/EuS multilayers with excellent multilayer sequencing are deposited via e-beam evaporation on the native oxide of Si(100) wafers at 4 × 10{sup −9} millibars. The samples have very small surface and interface roughness and show sharp interfaces. Ni layers are nanocrystalline 4–8 nm thick and EuS layers are 2–4 nm thick and are either amorphous or nanocrystalline. Unlike for Co/EuS multilayers, all Eu ions are in divalent (ferromagnetic) state. We show a direct antiferromagnetic coupling between EuS and Ni layers. At room temperature, the EuS layers are spin-polarized due to the proximity of Ni. Therefore, Ni/EuS is a candidate for room-temperature spintronics applications.
- OSTI ID:
- 22257704
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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