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Title: Carrier transport properties of Be-doped InAs/InAsSb type-II infrared superlattices

Abstract

The InAs/InAsSb type-II superlattice materials studied to date for infrared detector applications have been residually n-type, but p-type absorber regions with minority carrier electrons can result in increased photodiode quantum efficiency, R{sub o}A, and detectivity. Therefore, Be-doped InAs/InAsSb superlattices were investigated to determine the p-type InAs/InAsSb superlattice material transport properties essential to developing high quality photodiode absorber materials. Hall measurements performed at 10 K revealed that the superlattice converted to p-type with Be-doping of 3 × 10{sup 16} cm{sup −3} and the hole mobility reached 24 400 cm{sup 2}/Vs. Photoresponse measurements at 10 K confirmed the 175 meV bandgap and material optical quality.

Authors:
; ;  [1];  [2]
  1. Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Ohio 45433 (United States)
  2. Department of Physics, University of Dayton, Dayton, Ohio 45469 (United States)
Publication Date:
OSTI Identifier:
22257140
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 104; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BERYLLIUM; DOPED MATERIALS; ELECTRONS; HOLE MOBILITY; INDIUM ARSENIDES; QUANTUM EFFICIENCY; SUPERLATTICES

Citation Formats

Steenbergen, E. H., E-mail: Elizabeth.Steenbergen.1@us.af.mil, Mitchel, W. C., Mou, Shin, Brown, G. J., and Elhamri, S.. Carrier transport properties of Be-doped InAs/InAsSb type-II infrared superlattices. United States: N. p., 2014. Web. doi:10.1063/1.4861159.
Steenbergen, E. H., E-mail: Elizabeth.Steenbergen.1@us.af.mil, Mitchel, W. C., Mou, Shin, Brown, G. J., & Elhamri, S.. Carrier transport properties of Be-doped InAs/InAsSb type-II infrared superlattices. United States. https://doi.org/10.1063/1.4861159
Steenbergen, E. H., E-mail: Elizabeth.Steenbergen.1@us.af.mil, Mitchel, W. C., Mou, Shin, Brown, G. J., and Elhamri, S.. Mon . "Carrier transport properties of Be-doped InAs/InAsSb type-II infrared superlattices". United States. https://doi.org/10.1063/1.4861159.
@article{osti_22257140,
title = {Carrier transport properties of Be-doped InAs/InAsSb type-II infrared superlattices},
author = {Steenbergen, E. H., E-mail: Elizabeth.Steenbergen.1@us.af.mil and Mitchel, W. C. and Mou, Shin and Brown, G. J. and Elhamri, S.},
abstractNote = {The InAs/InAsSb type-II superlattice materials studied to date for infrared detector applications have been residually n-type, but p-type absorber regions with minority carrier electrons can result in increased photodiode quantum efficiency, R{sub o}A, and detectivity. Therefore, Be-doped InAs/InAsSb superlattices were investigated to determine the p-type InAs/InAsSb superlattice material transport properties essential to developing high quality photodiode absorber materials. Hall measurements performed at 10 K revealed that the superlattice converted to p-type with Be-doping of 3 × 10{sup 16} cm{sup −3} and the hole mobility reached 24 400 cm{sup 2}/Vs. Photoresponse measurements at 10 K confirmed the 175 meV bandgap and material optical quality.},
doi = {10.1063/1.4861159},
url = {https://www.osti.gov/biblio/22257140}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 1,
volume = 104,
place = {United States},
year = {2014},
month = {1}
}