Superior dielectric properties for template assisted grown (100) oriented Gd{sub 2}O{sub 3} thin films on Si(100)
- Institute of Electronic Materials and Devices, Leibniz University of Hannover, Schneiderberg 32, D-30167 Hannover (Germany)
- Information Technology Laboratory, Leibniz University of Hannover, Schneiderberg 32, D-30167 Hannover (Germany)
We report about the single crystalline growth and dielectric properties of Gd{sub 2}O{sub 3}(100) thin films on Si(100) surface. Using a two step molecular beam epitaxy growth process, we demonstrate that controlled engineering of the oxide/Si interface is a key step to achieve the atypical (100) oriented growth of Gd{sub 2}O{sub 3}. Unusually, high dielectric constant values (∼23–27) were extracted from capacitance voltage measurements. Such effect can be understood in terms of a two dimensional charge layer at the Gd{sub 2}O{sub 3}/Si interface (W. Sitaputra and R. Tsu, Appl. Phys. Lett. 101, 222903 (2012)) which can influence the dielectric properties of the oxide layer by forming an additional negative quantum capacitance.
- OSTI ID:
- 22257138
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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