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Title: Ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory

Abstract

An ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory was demonstrated, with discrete distributed gold nanoparticles, tetratetracontane (TTC), pentacene as the floating-gate layer, tunneling layer, and active layer, respectively. The electron traps at the TTC/pentacene interface were significantly suppressed, which resulted in an ambipolar operation in present memory. As both electrons and holes were supplied in the channel and trapped in the floating-gate by programming/erasing operations, respectively, i.e., one type of charge carriers was used to overwrite the other, trapped, one, a large memory window, extending on both sides of the initial threshold voltage, was realized.

Authors:
; ; ;  [1]
  1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China)
Publication Date:
OSTI Identifier:
22257020
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 104; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CHARGE CARRIERS; NANOSTRUCTURES; PENTACENE; THIN FILMS; TRANSISTORS; TRAPPING

Citation Formats

Han, Jinhua, Wang, Wei, Ying, Jun, and Xie, Wenfa. Ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory. United States: N. p., 2014. Web. doi:10.1063/1.4860990.
Han, Jinhua, Wang, Wei, Ying, Jun, & Xie, Wenfa. Ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory. United States. doi:10.1063/1.4860990.
Han, Jinhua, Wang, Wei, Ying, Jun, and Xie, Wenfa. Mon . "Ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory". United States. doi:10.1063/1.4860990.
@article{osti_22257020,
title = {Ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory},
author = {Han, Jinhua and Wang, Wei and Ying, Jun and Xie, Wenfa},
abstractNote = {An ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory was demonstrated, with discrete distributed gold nanoparticles, tetratetracontane (TTC), pentacene as the floating-gate layer, tunneling layer, and active layer, respectively. The electron traps at the TTC/pentacene interface were significantly suppressed, which resulted in an ambipolar operation in present memory. As both electrons and holes were supplied in the channel and trapped in the floating-gate by programming/erasing operations, respectively, i.e., one type of charge carriers was used to overwrite the other, trapped, one, a large memory window, extending on both sides of the initial threshold voltage, was realized.},
doi = {10.1063/1.4860990},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 1,
volume = 104,
place = {United States},
year = {2014},
month = {1}
}