Atomic scattering spectroscopy for determination of the polarity of semipolar AlN grown on ZnO

Journal Article · Mon Nov 04 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4829478· OSTI ID:22254121

Kobayashi, Atsushi; Ohta, Jitsuo ^[1]; Ueno, Kohei; Oshima, Masaharu ^[2]; Fujioka, Hiroshi ^[1]

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1. Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505 (Japan)
2. Department of Applied Chemistry, The University of Tokyo, Tokyo 113-8656 (Japan)

Determination of the polarity of insulating semipolar AlN layers was achieved via atomic scattering spectroscopy. The back scattering of neutralized He atoms on AlN surfaces revealed the atomic alignment of the topmost layers of semipolar AlN and the ZnO substrate. Pole figures of the scattering intensity were used to readily determine the polarity of these wurtzite-type semipolar materials. In addition, we found that +R-plane AlN epitaxially grows on −R-plane ZnO, indicating that the polarity flips at the semipolar AlN/ZnO interface. This polarity flipping is possibly explained by the appearance of −c and m-faces on the −R ZnO surfaces, which was also revealed by atomic scattering spectroscopy.

• OSTI ID: 22254121
• Journal Information: Applied Physics Letters, Vol. 103, Issue 19; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALIGNMENT
ALUMINIUM NITRIDES
BACKSCATTERING
EPITAXY
HELIUM
LAYERS
SPECTROSCOPY
SUBSTRATES
SURFACES
ZINC OXIDES