Surface reactivity and oxygen migration in amorphous indium-gallium-zinc oxide films annealed in humid atmosphere
- International Center for Young Scientists (ICYS-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044 (Japan)
- Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba 305-0044 (Japan)
- Frontier Research Center, Tokyo Institute of Technology, Mailbox S2-13, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan)
- Materials and Structures Laboratory (MSL), Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan)
An isotope tracer study, i.e., {sup 18}O/{sup 16}O exchange using {sup 18}O{sub 2} and H{sub 2}{sup 18}O, was performed to determine how post-deposition annealing (PDA) affected surface reactivity and oxygen diffusivity of amorphous indium–gallium–zinc oxide (a-IGZO) films. The oxygen tracer diffusivity was very high in the bulk even at low temperatures, e.g., 200 °C, regardless of PDA and exchange conditions. In contrast, the isotope exchange rate, dominated by surface reactivity, was much lower for {sup 18}O{sub 2} than for H{sub 2}{sup 18}O. PDA in a humid atmosphere at 400 °C further suppressed the reactivity of O{sub 2} at the a-IGZO film surface, which is attributable to –OH-terminated surface formation.
- OSTI ID:
- 22254076
- Journal Information:
- Applied Physics Letters, Vol. 103, Issue 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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