Surface transfer doping of diamond by MoO{sub 3}: A combined spectroscopic and Hall measurement study
- School of Engineering, University of Glasgow, Glasgow G12 8LT (United Kingdom)
- Department of Chemistry, National University of Singapore, Singapore 117543 (Singapore)
- Department of Physics, La Trobe University, Victoria 3086 (Australia)
- LSPM-CNRS, Université Paris 13, Villetaneuse 93430 (France)
- Department of Physics, National University of Singapore, Singapore 117542 (Singapore)
Surface transfer doping of diamond has been demonstrated using MoO{sub 3} as a surface electron acceptor material. Synchrotron-based high resolution photoemission spectroscopy reveals that electrons are transferred from the diamond surface to MoO{sub 3}, leading to the formation of a sub-surface quasi 2-dimensional hole gas within the diamond. Ex-situ electrical characterization demonstrated an increase in hole carrier concentration from 1.00 × 10{sup 13}/cm{sup 2} for the air-exposed hydrogen-terminated diamond surface to 2.16 × 10{sup 13}/cm{sup 2} following MoO{sub 3} deposition. This demonstrates the potential to improve the stability and performance of hydrogen-terminated diamond electronic devices through the incorporation of high electron affinity transition metal oxides.
- OSTI ID:
- 22254055
- Journal Information:
- Applied Physics Letters, Vol. 103, Issue 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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