High-mobility, air stable bottom-contact n-channel thin film transistors based on N,N′-ditridecyl perylene diimide
- Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (China)
Bottom-gate bottom-contact (BGBC) organic thin film transistors (OTFTs) based on N,N′-ditridecyl perylene diimide exhibit electron mobility as high as 3.54 cm{sup 2} V{sup −1} s{sup −1} in nitrogen, higher than that (1 cm{sup 2} V{sup −1} s{sup −1}) of bottom-gate top-contact devices. The better performance of BGBC configuration in N{sub 2} is attributed to lower contact resistance, which is further reduced by thermal annealing. After thermally annealing the BGBC OTFTs at 180 °C, electron mobility as high as 3.5 cm{sup 2} V{sup −1} s{sup −1}, current on/off ratio of 10{sup 6} and threshold voltage of 9 V are achieved in air, and the mobility retains above 1 cm{sup 2} V{sup −1} s{sup −1} after storage for two months in air. Thermal treatment enhanced crystalline grains, reduced grain boundaries, and suppressed the adsorption of H{sub 2}O and O{sub 2}, leading to excellent performance in air.
- OSTI ID:
- 22254046
- Journal Information:
- Applied Physics Letters, Vol. 103, Issue 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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