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Title: High spin polarization at room temperature in Ge-substituted Fe{sub 3}O{sub 4} epitaxial thin film grown under high oxygen pressure

Abstract

Epitaxial thin films of room-temperature ferrimagnetic (Fe,Ge){sub 3}O{sub 4} were fabricated using pulsed laser deposition. Films with a single-phase spinel structure were grown under high oxygen pressures (0.01–0.6 Pa). The carrier transport across (Fe,Ge){sub 3}O{sub 4}/Nb:SrTiO{sub 3} interface was studied to estimate the spin polarization of (Fe, Ge){sub 3}O{sub 4}. Current–voltage curves of Fe{sub 2.8}Ge{sub 0.2}O{sub 4}/Nb:SrTiO{sub 3} junction showed rectifying behavior even at 300 K whereas Fe{sub 3}O{sub 4}/Nb:SrTiO{sub 3} junction showed ohmic behavior. Calculations based on a model for a Schottky contact with a ferromagnetic component yielded a spin polarization of 0.50 at 300 K for Fe{sub 2.8}Ge{sub 0.2}O{sub 4}, indicating its potential as a promising spin injector.

Authors:
; ; ; ;  [1]
  1. Department of Electrical Engineering and Information Systems, Graduate School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)
Publication Date:
OSTI Identifier:
22253999
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 103; Journal Issue: 21; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ENERGY BEAM DEPOSITION; FERRITES; INTERFACES; IRON OXIDES; OXYGEN; PULSED IRRADIATION; SEMICONDUCTOR JUNCTIONS; SPIN ORIENTATION; STRONTIUM TITANATES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS

Citation Formats

Seki, Munetoshi, Takahashi, Masanao, Ohshima, Toshiyuki, Yamahara, Hiroyasu, and Tabata, Hitoshi. High spin polarization at room temperature in Ge-substituted Fe{sub 3}O{sub 4} epitaxial thin film grown under high oxygen pressure. United States: N. p., 2013. Web. doi:10.1063/1.4832062.
Seki, Munetoshi, Takahashi, Masanao, Ohshima, Toshiyuki, Yamahara, Hiroyasu, & Tabata, Hitoshi. High spin polarization at room temperature in Ge-substituted Fe{sub 3}O{sub 4} epitaxial thin film grown under high oxygen pressure. United States. https://doi.org/10.1063/1.4832062
Seki, Munetoshi, Takahashi, Masanao, Ohshima, Toshiyuki, Yamahara, Hiroyasu, and Tabata, Hitoshi. Mon . "High spin polarization at room temperature in Ge-substituted Fe{sub 3}O{sub 4} epitaxial thin film grown under high oxygen pressure". United States. https://doi.org/10.1063/1.4832062.
@article{osti_22253999,
title = {High spin polarization at room temperature in Ge-substituted Fe{sub 3}O{sub 4} epitaxial thin film grown under high oxygen pressure},
author = {Seki, Munetoshi and Takahashi, Masanao and Ohshima, Toshiyuki and Yamahara, Hiroyasu and Tabata, Hitoshi},
abstractNote = {Epitaxial thin films of room-temperature ferrimagnetic (Fe,Ge){sub 3}O{sub 4} were fabricated using pulsed laser deposition. Films with a single-phase spinel structure were grown under high oxygen pressures (0.01–0.6 Pa). The carrier transport across (Fe,Ge){sub 3}O{sub 4}/Nb:SrTiO{sub 3} interface was studied to estimate the spin polarization of (Fe, Ge){sub 3}O{sub 4}. Current–voltage curves of Fe{sub 2.8}Ge{sub 0.2}O{sub 4}/Nb:SrTiO{sub 3} junction showed rectifying behavior even at 300 K whereas Fe{sub 3}O{sub 4}/Nb:SrTiO{sub 3} junction showed ohmic behavior. Calculations based on a model for a Schottky contact with a ferromagnetic component yielded a spin polarization of 0.50 at 300 K for Fe{sub 2.8}Ge{sub 0.2}O{sub 4}, indicating its potential as a promising spin injector.},
doi = {10.1063/1.4832062},
url = {https://www.osti.gov/biblio/22253999}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 21,
volume = 103,
place = {United States},
year = {2013},
month = {11}
}