Second harmonic generation in photonic crystal cavities in (111)-oriented GaAs

Journal Article · Mon Nov 18 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4833545· OSTI ID:22253993

Buckley, Sonia; Radulaski, Marina; Vučković, Jelena ^[1]; Biermann, Klaus ^[2]

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1. E. L. Ginzton Laboratory, Stanford University, Stanford, California 94305 (United States)
2. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin (Germany)

We demonstrate second harmonic generation at telecommunications wavelengths in photonic crystal cavities in (111)-oriented GaAs. We fabricate 30 photonic crystal structures in both (111)- and (100)-oriented GaAs and observe an increase in generated second harmonic power in the (111) orientation, with the mean power increased by a factor of 3, although there is a large scatter in the measured values. We discuss possible reasons for this increase, in particular, the reduced two photon absorption for transverse electric modes in (111) orientation, as well as a potential increase due to improved mode overlap.

• OSTI ID: 22253993
• Journal Information: Applied Physics Letters, Vol. 103, Issue 21; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION
CRYSTAL STRUCTURE
CRYSTALS
GALLIUM ARSENIDES
HARMONIC GENERATION
ORIENTATION
PHOTONS