Relationship between open-circuit voltage in Cu(In,Ga)Se{sub 2} solar cell and peak position of (220/204) preferred orientation near its absorber surface

Minemoto, T.; Watanabe, T.; Teraji, S.; Kawamura, K.

doi:10.1063/1.4832995

Title: Relationship between open-circuit voltage in Cu(In,Ga)Se{sub 2} solar cell and peak position of (220/204) preferred orientation near its absorber surface

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Abstract

Cu(In,Ga)Se{sub 2} (CIGS) absorbers with various Ga/III, Ga/(In+Ga), profiles are prepared by the so-called “multi-layer precursor method” using multi-layer co-evaporation of material sources. It is revealed that open-circuit voltage (V{sub OC}) of CIGS solar cell is primarily dependent on averaged Ga/III near the surface of its absorber. This averaged Ga/III is well predicted by peak position of (220/204) preferred orientation of CIGS film near its surface investigated by glancing-incidence X-ray diffraction with 0.1° incident angle. Finally, the peak position of (220/204) preferred orientation is proposed as a measure of V{sub OC} before solar cell fabrication.

Authors:

Minemoto, T. ^[1]; Watanabe, T.; Teraji, S.; Kawamura, K. ^[2]

Department of Electrical and Electronic Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577 (Japan)
Environment and Energy Research Center, Nitto Denko Corporation, 2-8 Yamadaoka, Suita, Osaka 565-0871 (Japan)

Publication Date:: Mon Nov 25 00:00:00 EST 2013

OSTI Identifier:: 22253969

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 103; Journal Issue: 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE; ACCIDENTS; ELECTRIC POTENTIAL; EVAPORATION; FABRICATION; FILMS; GRAIN ORIENTATION; LAYERS; PEAKS; SOLAR CELLS; SURFACES; X-RAY DIFFRACTION

Citation Formats


                    Chantana, J., E-mail: jakapan@fc.ritsumei.ac.jp, Minemoto, T., Watanabe, T., Teraji, S., and Kawamura, K. Relationship between open-circuit voltage in Cu(In,Ga)Se{sub 2} solar cell and peak position of (220/204) preferred orientation near its absorber surface.  United States: N. p., 2013. 
        Web.  doi:10.1063/1.4832995.

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                    Chantana, J., E-mail: jakapan@fc.ritsumei.ac.jp, Minemoto, T., Watanabe, T., Teraji, S., & Kawamura, K. Relationship between open-circuit voltage in Cu(In,Ga)Se{sub 2} solar cell and peak position of (220/204) preferred orientation near its absorber surface.  United States.  https://doi.org/10.1063/1.4832995

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                    Chantana, J., E-mail: jakapan@fc.ritsumei.ac.jp, Minemoto, T., Watanabe, T., Teraji, S., and Kawamura, K. 2013.  
        "Relationship between open-circuit voltage in Cu(In,Ga)Se{sub 2} solar cell and peak position of (220/204) preferred orientation near its absorber surface".  United States.  https://doi.org/10.1063/1.4832995.

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@article{osti_22253969,

  title        = {Relationship between open-circuit voltage in Cu(In,Ga)Se{sub 2} solar cell and peak position of (220/204) preferred orientation near its absorber surface},

  author       = {Chantana, J., E-mail: jakapan@fc.ritsumei.ac.jp and Minemoto, T. and Watanabe, T. and Teraji, S. and Kawamura, K.},

  abstractNote = {Cu(In,Ga)Se{sub 2} (CIGS) absorbers with various Ga/III, Ga/(In+Ga), profiles are prepared by the so-called “multi-layer precursor method” using multi-layer co-evaporation of material sources. It is revealed that open-circuit voltage (V{sub OC}) of CIGS solar cell is primarily dependent on averaged Ga/III near the surface of its absorber. This averaged Ga/III is well predicted by peak position of (220/204) preferred orientation of CIGS film near its surface investigated by glancing-incidence X-ray diffraction with 0.1° incident angle. Finally, the peak position of (220/204) preferred orientation is proposed as a measure of V{sub OC} before solar cell fabrication.},

  doi          = {10.1063/1.4832995},

  url          = {https://www.osti.gov/biblio/22253969},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 22,

  volume       = 103,

  place        = {United States},

  year         = {Mon Nov 25 00:00:00 EST 2013},

  month        = {Mon Nov 25 00:00:00 EST 2013}

}

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