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Title: Influence of radiative and non-radiative recombination on the minority carrier lifetime in midwave infrared InAs/InAsSb superlattices

Abstract

Optical modulation response is used to study the influence of radiative, Shockley-Read-Hall, and Auger recombination processes on the minority carrier lifetime in a mid-wave infrared InAs/InAsSb superlattice. A comparison of calculated and measured temperature dependencies shows that the lifetime is influenced mainly by radiative recombination at low temperatures, resulting in an increase of the minority carrier lifetime from 1.8 μs at 77 K to 2.8 μs at 200 K. At temperatures above 200 K, Auger recombination increases rapidly and limits the lifetime. Shockley-Read-Hall limited lifetimes on the order of 10 μs are predicted for superlattices with lower background doping concentration.

Authors:
; ; ; ; ; ; ;  [1]
  1. Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, California 91109-8099 (United States)
Publication Date:
OSTI Identifier:
22253952
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 103; Journal Issue: 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER LIFETIME; INDIUM ARSENIDES; RECOMBINATION; SUPERLATTICES

Citation Formats

Höglund, L., Ting, D. Z., Khoshakhlagh, A., Soibel, A., Hill, C. J., Fisher, A., Keo, S., and Gunapala, S. D. Influence of radiative and non-radiative recombination on the minority carrier lifetime in midwave infrared InAs/InAsSb superlattices. United States: N. p., 2013. Web. doi:10.1063/1.4835055.
Höglund, L., Ting, D. Z., Khoshakhlagh, A., Soibel, A., Hill, C. J., Fisher, A., Keo, S., & Gunapala, S. D. Influence of radiative and non-radiative recombination on the minority carrier lifetime in midwave infrared InAs/InAsSb superlattices. United States. https://doi.org/10.1063/1.4835055
Höglund, L., Ting, D. Z., Khoshakhlagh, A., Soibel, A., Hill, C. J., Fisher, A., Keo, S., and Gunapala, S. D. 2013. "Influence of radiative and non-radiative recombination on the minority carrier lifetime in midwave infrared InAs/InAsSb superlattices". United States. https://doi.org/10.1063/1.4835055.
@article{osti_22253952,
title = {Influence of radiative and non-radiative recombination on the minority carrier lifetime in midwave infrared InAs/InAsSb superlattices},
author = {Höglund, L. and Ting, D. Z. and Khoshakhlagh, A. and Soibel, A. and Hill, C. J. and Fisher, A. and Keo, S. and Gunapala, S. D.},
abstractNote = {Optical modulation response is used to study the influence of radiative, Shockley-Read-Hall, and Auger recombination processes on the minority carrier lifetime in a mid-wave infrared InAs/InAsSb superlattice. A comparison of calculated and measured temperature dependencies shows that the lifetime is influenced mainly by radiative recombination at low temperatures, resulting in an increase of the minority carrier lifetime from 1.8 μs at 77 K to 2.8 μs at 200 K. At temperatures above 200 K, Auger recombination increases rapidly and limits the lifetime. Shockley-Read-Hall limited lifetimes on the order of 10 μs are predicted for superlattices with lower background doping concentration.},
doi = {10.1063/1.4835055},
url = {https://www.osti.gov/biblio/22253952}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 22,
volume = 103,
place = {United States},
year = {2013},
month = {11}
}