Carrier-number fluctuations in the 2-dimensional electron gas at the LaAlO{sub 3}/SrTiO{sub 3} interface

Journal Article · Mon Dec 02 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4838637· OSTI ID:22253920

Romeo, F.; Pagano, S. ^[1]; Di Gennaro, E.; Miletto Granozio, F.; Scotti di Uccio, U. ^[2]; Pallecchi, I.; Marrè, D. ^[3]

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1. Dipartimento di Fisica “E. R. Caianiello” and CNR-SPIN Salerno, Università di Salerno, I-84084 Fisciano, Salerno (Italy)
2. CNR-SPIN Napoli and Dipartimento di Fisica, Università di Napoli “Federico II,” I-80126 Napoli (Italy)
3. CNR-SPIN Genova and Dipartimento di Fisica, Università di Genova, I-16152 Genova (Italy)

The voltage-spectral density S{sub V} (f) of the 2-dimensional electron gas formed at the interface of LaAlO{sub 3}/SrTiO{sub 3} has been thoroughly investigated. The low-frequency component has a clear 1/f behavior with a quadratic bias current dependence, attributed to resistance fluctuations. However, its temperature dependence is inconsistent with the classical Hooge model, based on carrier-mobility fluctuations. The experimental results are, instead, explained in terms of carrier-number fluctuations, due to an excitation-trapping mechanism of the 2-dimensional electron gas.

• OSTI ID: 22253920
• Journal Information: Applied Physics Letters, Vol. 103, Issue 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINATES
CARRIER MOBILITY
CARRIERS
ELECTRIC POTENTIAL
ELECTRON GAS
EXCITATION
FLUCTUATIONS
INTERFACES
LANTHANUM COMPOUNDS
SPECTRAL DENSITY
STRONTIUM TITANATES
TEMPERATURE DEPENDENCE