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Title: Excitonic fine-structure splitting in telecom-wavelength InAs/GaAs quantum dots: Statistical distribution and height-dependence

Abstract

The variation of the excitonic fine-structure splitting is studied for semiconductor quantum dots under the influence of a strain-reducing layer, utilized to shift the emission wavelength of the excitonic transition into the telecom-wavelength regime of 1.3–1.5 μm. By means of a sp{sup 3}s{sup *}-tight-binding model and configuration interaction, we calculate wavelength shifts and fine-structure splittings for various quantum dot geometries. We find the splittings remaining small and even decreasing with strain-reducing layer composition for quantum dots with large height. Combined with an observed increased emission efficiency, the applicability for generation of entanglement photons is persistent.

Authors:
; ; ;  [1];  [2]
  1. Institute of Theoretical Physics, University of Bremen, Otto-Hahn-Allee 1, 28359 Bremen (Germany)
  2. College of Optical Sciences, University of Arizona, 1630 E. University Blvd., Tucson, Arizona 85721-0094 (United States)
Publication Date:
OSTI Identifier:
22253855
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 103; Journal Issue: 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CONFIGURATION INTERACTION; DISTRIBUTION; EFFICIENCY; EMISSION; FINE STRUCTURE; GALLIUM ARSENIDES; GEOMETRY; HEIGHT; INDIUM ARSENIDES; LAYERS; PHOTONS; QUANTUM DOTS; QUANTUM ENTANGLEMENT; SEMICONDUCTOR MATERIALS; STRAINS; WAVELENGTHS

Citation Formats

Goldmann, Elias, Barthel, Stefan, Florian, Matthias, Jahnke, Frank, and Schuh, Kolja. Excitonic fine-structure splitting in telecom-wavelength InAs/GaAs quantum dots: Statistical distribution and height-dependence. United States: N. p., 2013. Web. doi:10.1063/1.4833027.
Goldmann, Elias, Barthel, Stefan, Florian, Matthias, Jahnke, Frank, & Schuh, Kolja. Excitonic fine-structure splitting in telecom-wavelength InAs/GaAs quantum dots: Statistical distribution and height-dependence. United States. https://doi.org/10.1063/1.4833027
Goldmann, Elias, Barthel, Stefan, Florian, Matthias, Jahnke, Frank, and Schuh, Kolja. Mon . "Excitonic fine-structure splitting in telecom-wavelength InAs/GaAs quantum dots: Statistical distribution and height-dependence". United States. https://doi.org/10.1063/1.4833027.
@article{osti_22253855,
title = {Excitonic fine-structure splitting in telecom-wavelength InAs/GaAs quantum dots: Statistical distribution and height-dependence},
author = {Goldmann, Elias and Barthel, Stefan and Florian, Matthias and Jahnke, Frank and Schuh, Kolja},
abstractNote = {The variation of the excitonic fine-structure splitting is studied for semiconductor quantum dots under the influence of a strain-reducing layer, utilized to shift the emission wavelength of the excitonic transition into the telecom-wavelength regime of 1.3–1.5 μm. By means of a sp{sup 3}s{sup *}-tight-binding model and configuration interaction, we calculate wavelength shifts and fine-structure splittings for various quantum dot geometries. We find the splittings remaining small and even decreasing with strain-reducing layer composition for quantum dots with large height. Combined with an observed increased emission efficiency, the applicability for generation of entanglement photons is persistent.},
doi = {10.1063/1.4833027},
url = {https://www.osti.gov/biblio/22253855}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 24,
volume = 103,
place = {United States},
year = {2013},
month = {12}
}