Structural investigations of hydrogenated epitaxial graphene grown on 4H-SiC (0001)

Journal Article · Mon Dec 09 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4848815· OSTI ID:22253776

Tokarczyk, M.; Stępniewski, R. ^[1]; Możdżonek, M.; Strupiński, W.; Ciepielewski, P. ^[2]; Borysiuk, J. ^[1]; Baranowski, J. M. ^[1]

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1. Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw (Poland)
2. Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw (Poland)

Structural investigations of hydrogenated epitaxial graphene grown on SiC(0001) are presented. It is shown that hydrogen plays a dual role. In addition to contributing to the well-known removal of the buffer layer, it goes between the graphene planes, resulting in an increase of the interlayer spacing to 3.6 Å–3.8 Å. It is explained by the intercalation of molecular hydrogen between carbon planes, which is followed by H{sub 2} dissociation, resulting in negatively charged hydrogen atoms trapped between the graphene layers, with some addition of covalent bonding to carbon atoms. Negatively charged hydrogen may be responsible for p-doping observed in hydrogenated multilayer graphene.

• OSTI ID: 22253776
• Journal Information: Applied Physics Letters, Vol. 103, Issue 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMS
BUFFERS
EPITAXY
GRAPHENE
HYDROGEN
HYDROGENATION
LAYERS
SILICON CARBIDES