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Title: High-performance self-aligned inversion-channel In{sub 0.53}Ga{sub 0.47}As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO{sub 2}

Abstract

Self-aligned inversion-channel In{sub 0.53}Ga{sub 0.47}As metal-oxide-semiconductor field-effect-transistors (MOSFETs) have been fabricated using the gate dielectrics of in-situ directly atomic-layer-deposited (ALD) HfO{sub 2} followed by ALD-Al{sub 2}O{sub 3}. There were no surface pretreatments and no interfacial passivation/barrier layers prior to the ALD. TiN/Al{sub 2}O{sub 3} (4 nm)/HfO{sub 2} (1 nm)/In{sub 0.53}Ga{sub 0.47}As/InP MOS capacitors exhibited well-behaved capacitance-voltage characteristics with true inversion behavior, low leakage current densities of ∼10{sup −8} A/cm{sup 2} at ±1 MV/cm, and thermodynamic stability at high temperatures. Al{sub 2}O{sub 3} (3 nm)/HfO{sub 2} (1 nm)/In{sub 0.53}Ga{sub 0.47}As MOSFETs of 1 μm gate length, with 700 °C–800 °C rapid thermal annealing in source/drain activation, have exhibited high extrinsic drain current (I{sub D}) of 1.5 mA/μm, transconductance (G{sub m}) of 0.84 mS/μm, I{sub ON}/I{sub OFF} of ∼10{sup 4}, low sub-threshold swing of 103 mV/decade, and field-effect electron mobility of 1100 cm{sup 2}/V · s. The devices have also achieved very high intrinsic I{sub D} and G{sub m} of 2 mA/μm and 1.2 mS/μm, respectively.

Authors:
; ; ;  [1]; ;  [2]; ; ;  [3];  [4]
  1. Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China)
  2. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
  3. National Nano Device Laboratories, Hsinchu 30076, Taiwan (China)
  4. Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
Publication Date:
OSTI Identifier:
22253682
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 103; Journal Issue: 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; ANNEALING; CAPACITORS; DENSITY; DEPLETION LAYER; DEPOSITION; DIELECTRIC MATERIALS; ELECTRON MOBILITY; HAFNIUM OXIDES; INDIUM PHOSPHIDES; LEAKAGE CURRENT; MOSFET; SEMICONDUCTOR MATERIALS; SILICON OXIDES

Citation Formats

Lin, T. D., Chang, W. H., Chang, Y. C., Hong, M., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw, Chu, R. L., Chang, Y. H., Lee, M. Y., Hong, P. F., Chen, Min-Cheng, and Kwo, J., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw. High-performance self-aligned inversion-channel In{sub 0.53}Ga{sub 0.47}As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO{sub 2}. United States: N. p., 2013. Web. doi:10.1063/1.4852975.
Lin, T. D., Chang, W. H., Chang, Y. C., Hong, M., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw, Chu, R. L., Chang, Y. H., Lee, M. Y., Hong, P. F., Chen, Min-Cheng, & Kwo, J., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw. High-performance self-aligned inversion-channel In{sub 0.53}Ga{sub 0.47}As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO{sub 2}. United States. doi:10.1063/1.4852975.
Lin, T. D., Chang, W. H., Chang, Y. C., Hong, M., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw, Chu, R. L., Chang, Y. H., Lee, M. Y., Hong, P. F., Chen, Min-Cheng, and Kwo, J., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw. Mon . "High-performance self-aligned inversion-channel In{sub 0.53}Ga{sub 0.47}As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO{sub 2}". United States. doi:10.1063/1.4852975.
@article{osti_22253682,
title = {High-performance self-aligned inversion-channel In{sub 0.53}Ga{sub 0.47}As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO{sub 2}},
author = {Lin, T. D. and Chang, W. H. and Chang, Y. C. and Hong, M., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw and Chu, R. L. and Chang, Y. H. and Lee, M. Y. and Hong, P. F. and Chen, Min-Cheng and Kwo, J., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw},
abstractNote = {Self-aligned inversion-channel In{sub 0.53}Ga{sub 0.47}As metal-oxide-semiconductor field-effect-transistors (MOSFETs) have been fabricated using the gate dielectrics of in-situ directly atomic-layer-deposited (ALD) HfO{sub 2} followed by ALD-Al{sub 2}O{sub 3}. There were no surface pretreatments and no interfacial passivation/barrier layers prior to the ALD. TiN/Al{sub 2}O{sub 3} (4 nm)/HfO{sub 2} (1 nm)/In{sub 0.53}Ga{sub 0.47}As/InP MOS capacitors exhibited well-behaved capacitance-voltage characteristics with true inversion behavior, low leakage current densities of ∼10{sup −8} A/cm{sup 2} at ±1 MV/cm, and thermodynamic stability at high temperatures. Al{sub 2}O{sub 3} (3 nm)/HfO{sub 2} (1 nm)/In{sub 0.53}Ga{sub 0.47}As MOSFETs of 1 μm gate length, with 700 °C–800 °C rapid thermal annealing in source/drain activation, have exhibited high extrinsic drain current (I{sub D}) of 1.5 mA/μm, transconductance (G{sub m}) of 0.84 mS/μm, I{sub ON}/I{sub OFF} of ∼10{sup 4}, low sub-threshold swing of 103 mV/decade, and field-effect electron mobility of 1100 cm{sup 2}/V · s. The devices have also achieved very high intrinsic I{sub D} and G{sub m} of 2 mA/μm and 1.2 mS/μm, respectively.},
doi = {10.1063/1.4852975},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 25,
volume = 103,
place = {United States},
year = {2013},
month = {12}
}