Selective charge doping of chemical vapor deposition-grown graphene by interface modification
- NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198 (Japan)
The doping and scattering effect of substrate on the electronic properties of chemical vapor deposition (CVD)-grown graphene are revealed. Wet etching the underlying SiO{sub 2} of graphene and depositing self-assembled monolayers (SAMs) of organosilane between graphene and SiO{sub 2} are used to modify various substrates for CVD graphene transistors. Comparing with the bare SiO{sub 2} substrate, the carrier mobility of CVD graphene on modified substrate is enhanced by almost 5-fold; consistently the residual carrier concentration is reduced down to 10{sup 11} cm{sup −2}. Moreover, scalable and reliable p- and n-type graphene and graphene p-n junction are achieved on various silane SAMs with different functional groups.
- OSTI ID:
- 22253681
- Journal Information:
- Applied Physics Letters, Vol. 103, Issue 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Nitrogen doping of chemical vapor deposition grown graphene on 4H-SiC (0001)
Growth and Isolation of Large Area Boron-Doped Nanocrystalline Diamond Sheets: A Route toward Diamond-on-Graphene Heterojunction